[paper] A Review of Sharp-Switching Band-Modulation Devices

Sorin Cristoloveanu¹, Joris Lacord², Sébastien Martinie², Carlos Navarro³, Francisco Gamiz³, Jing Wan⁴, Hassan El Dirani¹, Kyunghwa Lee¹ and Alexander Zaslavsky⁵

A Review of Sharp-Switching Band-Modulation Devices

Micromachines 2021, 12, 1540.

DOI: 10.3390/mi12121540

   
1 IMEP-LAHC, Université Grenoble Alpes (F)
2 CEA, LETI, MINATEC Campus (F)
3 CITIC-UGR, University of Granada (SP)
4 Fudan University, Shanghai (CN)
5 Brown University, Providence (US)

Abstract: This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation.

Fig: Average subthreshold swing SS vs. normalized ION plot. 

Green points indicate CMOS-compatible materials.

Acknowledgements: The European authors are grateful for support from the EU project REMINDER (H2020-687931). Alexander Zaslavsky acknowledges the support of the U.S. National Science Foundation (award QII-TACS-1936221).

[book] Advanced ASM-HEMT Model for GaN HEMTs

Sourabh Khandelwal

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

A New Industry-Standard Compact Model 

for GaN-based Power and RF Circuit Design

DOI: 10.1007/978-3-030-77730-2

eBook ISBN: 978-3-030-77730-2

Describes in detail a new industry standard for GaN-based power and RF circuit design. Includes discussion of practical problems and their solutions in GaN device modeling. Covers both radio-frequency (RF) and power electronics application of GaN technology and describes SPICE modeling of both GaN RF and power devices.

Table of contents:

• Front Matter; pp. i-xv
• Gallium Nitride Semiconductor Devices; pp. 1-8
• Compact Modeling; pp. 9-19
• Introduction to ASM-HEMT Compact Model; pp. 21-31
• Core Formulations in ASM-HEMT Model; pp. 33-45
• Non-ideal Effects in Device Current and Their Modeling; pp. 47-62
• Trapping Models; pp. 63-81
• Non-Ideal Effects in GaN Capacitances and Their Modeling; pp. 83-100
• Gate Current Model; pp. 101-113
• Effect of Ambient Temperature on GaN Device; pp. 115-124
• Noise Models; pp. 125-130
• Parameter Extraction in ASM-HEMT Model; pp. 131-150
• Advance Simulations with ASM-HEMT Model; pp. 153-174
• Resources for ASM-HEMT Model Users; pp. 175-175
• Back Matter; pp. 175-188

About the author:

Sourabh Khandelwal is Senior Lecturer at the School of Engineering at Macquarie University, Sydney. He is the lead developer of ASM--HEMT compact model, which is a new industry standard compact model for GaN RF and power devices. Earlier to this role, Manager of Berkeley Device Modeling Center and Postdoctoral Researcher at the BSIM group at University of California, Berkeley. Before that, he worked as Research Engineer at IBM Semiconductor Research. He has over 200 publications in top-tier conferences and journals in the area of semiconductor device modeling and circuit design.

[https://t.co/vKeanjzJ3k] Global chip shortage; Is engineer shortfall the next big problem? #semi #engineers #electronics #chips #design https://t.co/0EZI1EVmDv

[https://t.co/vKeanjzJ3k] Global chip shortage; Is engineer shortfall the next big problem? #semi #engineers #electronics #chips #design https://t.co/0EZI1EVmDv

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Junior and Senior Researcher positions on advanced semiconductor devices at URV, in Tarragona, Spain

 

Junior and Senior Researcher positions on advanced semiconductor devices at URV, in Tarragona, Spain

The Nanoelectronic and Photonic Systems (NEPHOS) Group at the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV) in Tarragona, Spain, is looking for candidades for  Junior and Senior Researccher positions funded by  the Spanish Ministry of Science.

There are three categories:

1) Junior category: Candidates who obtained their Ph D between January 1 2017 and December 31 2019

2) General category: Candidates who obtained their Ph D between January 1 2011 and December 31 2019

3) For candidales with disability or functional diversity, they must have obtained their Ph D between January 1 2008 and December 31 219.

The duration of this position is 3+2 years; aftewards the position can become permanent.

Candidates must have performed significant contributions in the field of semiconductor devices during their Ph D or later, and this has to be demosntarted by a good number of publications.

Depending on candidate's background, there are several options for the research project to carry out:

1) Organic TFT technology: fabrication, characterization and modeling.

2) Organic solar cells technology: fabrication, characterization and modeling.

3) Modeling (in particular compact modeling) and electrical characterization of 2D semiconductor FETs.

4) Modeling (in particular compact modeling) and electrical characterization of nanowire FETs.

The NEPHOS Group at URV is currently working on the physics, characterization and modeling (in particular compact modeling) of emerging devices, and also in the fabrication and characterization of nanostructured organic photovoltaic devices. Regarding emerging devices, the present interests of the group at URV are the characterization and modeling of nanowire MOSFETs, GaN HEMTs, Graphene and 2D semiconductor FETs and organic and oxide TFTs. Other interests are the fabrication of polymeric TFTs and the modeling of organic solar cells.

Candidates must send their CVs, by January 17  2022 to Prof. Benjamin Iñiguez (Fellow, IEEE)

benjamin.iniguez@urv.cat

Tarragona is about 100 Km south from Barcelona, on the coast (the so-called "Costa Daurada", Golden Coast). Traveling to Tarragona from Barcelona is easier. There are frequent direct buses between Tarragona and Barcelona Airport, and also frequent trains between Tarragona and Barcelona. Besides, from some European cities it is possible to fly to Reus Airport, which is about 10 Km from Tarragona.

Tarragona is one of the most important hubs of tourism in Europe, not only because of the nice beaches around the city, but also because of its historical landmarks.. Tarragona was a very important city of the Roman Empire. In 2000 UNESCO committee officially declared the Roman archaeological complex of Tarraco (name of Tarragona during the Roman Empire) a World Heritage Site. This recognition is intended to help ensure the conservation of the monuments, as well as to introduce them to the broader international public.

What will the next 50 years bring? #IAmIntel #chips #semi #manufacturing https://t.co/He4qmrkVYY

What will the next 50 years bring? #IAmIntel #chips #semi #manufacturing https://t.co/He4qmrkVYY

— Wladek Grabinski (@wladek60) Dec 29, 2021

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December 29, 2021 at 11:48PM
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