[MEAD] Low-Power Analog IC Design

MEAD Education

June 22-26, 2026

Registration deadline: May 22, 2026

Payment deadline: June 12, 2026

MONDAY, June 22
8:30-12:00 am	MOS Transistor Modeling for Low-Voltage and Low-Power Circuit Design	Christian Enz
1:30-5:00 pm	Design of Low-Power Analog Circuits using the Inversion Coefficient	Christian Enz
TUESDAY, June 23
8:30-10:00 am	Noise Performance of Elementary Circuits	Boris Murmann
10:30-12:00 am	Noise Performance of Filters, Feedback & SC Circuits	Boris Murmann
1:30-3:00 pm	Opamp Topologies and Design: Single-Stage Circuits	Boris Murmann
3:30-5:00 pm	Opamp Topologies: Cascoded and Two-Stage Circuits	Boris Murmann

[Read more and REGISTER]

Postdoc in Semiconductor Devices, and circuit design

Postdoc in Semiconductor Devices, and circuit design

Sønderborg, Denmark

We [sdu.dk] are seeking an enthusiastic new colleague as a PostDoc in the field of Semiconductor Devices, and circuit design. As a postdoc in our team, you will have the opportunity to contribute to cutting-edge research and innovation in this rapidly evolving field with a strong collaboration with international industry partners.

The position is located in the section of Electrical Engineering in Sønderborg within the Centre for Industrial Electronics (CIE). The Centre has currently approximately 30 faculty members including senior (full and associate professors), junior (assistant professors and postdocs), PhDs, and support staff. The task portfolio of the PostDocs will be linked to one main project and several smaller projects within CIE. CIE is embedded in a powerhouse in electronics, which includes researchers and developers at universities and industries on both sides of the Danish-German border. CIE is a new initiative striving for high quality and great impact of its research, innovation, and education. Central to achieving this objective is access to state-of-the-art facilities and collaborations with industries. In the semiconductor research group in CIE, we are a member of European projects and already settled our international collaborations with the pioneer industry.

The positions aim to build strong knowledge and competencies within the field of semiconductor devices, especially in the fields of wide band gap semiconductor devices, circuit design, failure mechanisms, and simulations.

Job description

• Conduct research in the field of WBG semiconductors with a focus on GaN and SiC devices.
• Innovate design structures through simulation-based approaches calibrated by experimental data.
• Apply TCAD simulation and design tools, build demonstrators, and verify your simulation by experimental measurements.
• Familiar with the fabrication process to realize devices in the clean room and explore their potential applications.
• Experimental characterization of devices (static and dynamic) to analyze the device behavior.
• Stay updated with the latest advancements in WBG semiconductor devices and contribute to the development of innovative solutions.
• You will be involved in the daily supervision of PhD, Master, and Bachelor students who perform research on similar topics.
• You will publish and present your work both at international conferences and in scientific journals with high impact.

Profile and requirements 

• Ph.D. in Electrical Engineering, Semiconductor Physics, or a related field.
• Strong background in theory and simulation of WBG semiconductor devices, device modeling, and circuit design.
• Hands-on experience in fabrication processes such as lithography, Mask design, etching, and deposition appreciated.
• Background in characterization techniques, failure mechanisms, and reliability tests.
• Ability to work independently as well as collaboratively in a research team.
• Strong communication skills to effectively present research findings and contribute to scientific discussions.
• Ability to publish in high-impact conferences and journals.

Starting date: March 2024.
Type of contract: Full-time
Employment: 2-year position

Further information is available from 

Professor Thomas Ebel, Head of CIE, phone: +45 93 50 72 05 

Associate Professor Samaneh Sharbati, phone: +45 65 50 82 60

Conditions of employment
Employment as a postdoc requires scientific qualifications at PhD level. Employment as a postdoc is temporary and will cease without further notice at the end of the period. The successful applicant will be employed in accordance with the agreement between the Ministry of Finance and the Danish Confederation of Professional Associations

The assessment process
Read about the Assessment and selection process. Shortlisting may be used.

Application procedure

• The application must be in English and must include:Motivated application
• Detailed Curriculum Vitae
• Certificates/Diplomas (MSc and PhD)
• List of publications, indicating the publications attached
• Examples of the most relevant publications. Please attach one pdf-file for each publication
• Reference letters and other relevant qualifications may also be included.

Formalities
Documents should not contain a CPR number (civil registration number) – in this case, the CPR number must be crossed out. The application and CV must not exceed 10 MB. If you experience technical problems, you must contact hcm-support@sdu.dk.

The application deadline is 20. February 2024 at 23.59.

Further information for international applicants about entering and working in Denmark.

Further information about The Faculty of Engineering.

The University of Southern Denmark wishes to reflect the surrounding community and therefore encourages everyone, regardless of personal background, to apply for the position.

[paper] Compact Model of Graphene FETs

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Oihana Txoperena,

Elias Torres, and David Jiménez

A Scalable Compact Model for the Static Drain Current of Graphene FETs

IEEE TED, Vol. 71, No. 1, January 2024

DOI:  10.1109/TED.2023.3330713

1 Departament d’Enginyeria Electrònica, Escola d’Enginyeria, UAB, 08193 Bellaterra, Spain
2 Graphenea Semiconductor SLU, 20009 San Sebastián, Spain.

Abstract: The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures I–V experimental dependencies induced by geometrical scaling effects for graphene field-effect transistor (GFET) technologies. Such a scalable model is an indispensable ingredient for the boost of large-scale GFET applications, as it has been already proved in solid industry-based CMOS technologies. Dependencies of the physical model parameters on channel dimensions are thoroughly investigated, and semi-empirical expressions are derived, which precisely characterize such behaviors for an industry-based GFET technology, as well as for others developed in the research laboratory. This work aims at the establishment of the first industry standard GFET compact model that can be integrated in circuit simulation tools and, hence, can contribute to the update of GFET technology from the research level to massive industry production.

Fig: Graphenea GFET schematic cross-section not drawn to scale. Graphene under metal contacts is not shown.The drain current has explicit derivation in respect to Qgr, where Qt and Qp(n) are the transport sheet and p(n)-type charges, respectively; Vc is the chemical potential, h is the reduced Planck constant, uf is the Fermi velocity, e is the electron charge, and k is a coefficient. Qt and, thus, ID can be calculated according to Vc polarity at source (Vcs) and drain (Vcd), respectively. Hence, at n-type region where Vcs, Vcd > 0 and Qp = 0

Acknowledgements: This work was supported in part by the European Union’s Horizon 2020 Research and Innovation Program GrapheneCore3 under Grant 881603; in part by the Ministerio de Ciencia, Innovación y Universidades under Grant RTI2018-097876-B-C21 (MCIU/AEI/ FEDER, UE), Grant FJC2020-046213-I, and Grant PID2021-127840NBI00 (MCIN/AEI/FEDER, UE); in part by the European Union Regional Development Fund within the Framework of the ERDF Operational Program of Catalonia 2014–2020 with the Support of the Department de Recerca i Universitat, with a grant of 50% of Total Cost Eligible; and in part by the GraphCAT Project under Grant 001-P-001702. 

[paper] eSim: An Open Source EDA Tool

Rahul Paknikar, Saurabh Bansode, Gloria Nandihal, Madhav P. Desai, Kannan M. Moudgalya, 

and Ashutosh Jha*

eSim: An Open Source EDA Tool for Mixed-Signal and Microcontroller Simulations

4th International Conference on Circuits, Systems and Simulation

(ICCSS), 2021, pp. 212-217,

DOI: 10.1109/ICCSS51193.2021.9464198.

Indian Institute of Technology Bombay, Mumbai, Maharashtra, India
* Vellore Institute of Technology Chennai, Tamil Nadu, India

Abstract: The ability to carry out simulations before making a PCB can save a lot of time, effort and cost. This work explains the creation of an open source mixed-signal simulation software eSim that will be of great help to students, hobbyists, the SME sector and startups. Analog and digital components are respectively modelled using SPICE and a hardware descriptive language in eSim. Inclusion of AVR based microcontroller as a part of the digital circuit is demonstrated through its instructions implemented as a C code library. This methodology could be used to provide support to other microcontroller families, such as PIC, STM and also more sophisticated controllers. These concepts are demonstrated through a few examples.

Fig: Workflow of NGHDL

Acknowledgment: The authors would like to thank Prof. Pramod Murali, Department of Electrical Engineering, IIT Bombay and Mrs. Usha Viswanathan, FOSSEE, IIT Bombay for their guidance. We would also like to express our gratitude towards Powai Labs Technology Private Limited for their gratis contribution to the VHPIDIRECT package and Utility package of NGHDL. The FOSSEE project is funded by the National Mission on Education through ICT, Ministry of Education, Govt. of India.