An Empirical Model to Enhance the Flexibility of gm/Id Tuning in BSIM-BULK Model

Ravi Goel, Chetan Gupta, Yogesh S. Chauhan

EE Department, Indian Institute of Technology Kanpur, Kanpur, India

Published in: 2018 5th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON)

Abstract: Recent enhancement in BSIM-BULK (formerly BSIM6) model is presented in this work. The industry standard models like BSIM4, PSP, BSIM-BULK etc. lack the parameters for tuning of transconductance to channel current ratio (gm/Id). gm/Id is also a critical figure of merit for analog applications. Here, we propose an empirical model to enhance the flexibility of gm/Id tuning behavior. The proposed model provides good fitting for different channel lengths and drain bias.

Paper Sections:
I. Introduction
II. An Empirical Model for gm/Id Tuning
III. Model Implementation
IV. Model Validation with TCAD
V. Conclusion

Source:
DOI: 10.1109/UPCON.2018.8597065