Advances in RF and THz emerging electronic devices webinar at IPN-UAB

The webinar joitly co-organize together with Instituto Politécnico Nacional, Mexico 

is intended to present and discuss recent advances in RF and THz emerging electronic devices.

Feel free to share the information with your colleagues and/or students. The registration is free, and you can do it here (it is in Spanish but the only required fields are Name, Surname, Email, and Email confirmation). Alternatively, you can follow the live stream in this youtube channel.

The time appearing in the flyers are referred to Mexico City's time. The schedule is starting each day Nov.16-18, 2021 at 16 hrs CET.

If you have further questions you can contact 

• Aníbal Uriel Pacheco Sanchez or 
• Eloy Ramirez Garcia, IPN co-organizer

   

Career opportunities at VTT

Career opportunities at 

VTT Microelectronics and Quantum Technologies 

Apply by 14.11.2021

VTT is one of the leading research organizations in Europe and we are operating the largest R&D cleanroom in the Nordic countries, located in Micronova premises, Espoo. We develop innovative micro, nano and quantum systems and algorithms and software driven by different sensing, communication and computing applications. A timely example being the building of Finland's first quantum computer. We work closely with global industrial and academic players of different fields of technology. What unites us at VTT are the curiosity, passion of learning and devotion to finding solutions to global challenges and answers to our customers' needs. You can familiarize with us further by exploring VTT's research infra through VTT World.

Due to our continual growth, we are currently seeking for more than 15 new talents in microelectronics and quantum technologies to join our team. If you are interested in joining VTT, read more about job opportunities using links below:  

• Summary of all job openings in Microelectronics and Quantum Technologies teams
• Research Scientist, Superconducting Quantum Circuits
• Research Scientist, Quantum Hardware Development
• Senior / Research Scientist, Digital Electronics and Embedded Software 
• Research Scientist, Quantum Algorithms and Software
• Research Scientist, Neuromorphic Computing Algorithms and Software
• Research Scientist, Nanoelectronic Devices
• Research Scientist, Photonic and Thermal Devices
• Two Senior / Research Scientists, Analog IC Design for Neuromorphic Computing
• Research Scientist, Silicon Photonics Process Integration
• Research Scientist, Optical Computing and Quantum Photonics Hardware
• Research Technicians, Cleanroom
• Mechanical Designer
• Master's Thesis Worker, Low Temperature Physics
• Master's Thesis Worker, Photonic and Thermal Devices
• Master's Thesis Worker, Nanoelectronic Devices
• Master's Thesis Worker, Graphene Quality Control

 

Best regards

 

Matteo Cherchi, PhD

Senior Scientist

Silicon photonics

Tel. +358 40 6849040

- - - - - - - - - - - - - -

VTT
Micronova

Tietotie 3, Espoo, Finland

vttresearch.com

 

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[paper] InP HEMTs for future THz applications

J.Ajayan^a, D.Nirmal^b, Ribu Mathew^c, Dheena Kurian^d, P.Mohankumar^e, L.Arivazhagan^b, D.Ajitha^f

A critical review of design and fabrication challenges in InP HEMTs 

for future terahertz frequency applications

Materials Science in Semiconductor Processing

Volume 128, 15 June 2021, 105753

  
a SR University, Warangal, Telangana, India
b Karunya Institute of Technology and Sciences, Coimbatore, Tamilnadu, India
c VIT Bhopal University, Bhopal, Madhya Pradesh, India
d Kerala Technological University, Trivandrum, Kerala, India
e Sona College of Technology, Salem, Tamilnadu, India
f Sreenidhi Institute of Science and Technology, Hyderabad, Telangana, India

Abstract: This article critically reviews the materials, processing and reliability of InP high electron mobility transistors (InP HEMTs) for future terahertz wave applications. The factors such as drain current (ID) over 1200 mA/mm, transconductance (gm) over 3000 mS/mm, cut off frequency (fT) over 700 GHz and maximum oscillation frequency (fmax) over 1300 GHz makes InP HEMTs suitable for Terahertz wave applications. Furthermore, low DC power consumption and outstanding low noise performance makes InP HEMT most appropriate transistor technology for the development of space based receivers. This review article critically assesses the challenges in miniaturization of InP HEMTs, doping strategies in InP HEMTs, buried platinum technology, impact of annealing process and temperature, influence of electron and proton irradiation, thermal and bias stress on the reliability of InP HEMTs, cavity and gating effects and influence of trapping effects. InP HEMTs are very much preferable in applications like radio astronomy, terahertz optical and wireless communication systems, atmospheric imaging and sensing, automotive radar, ground based receivers in deep space networks, terahertz imaging and sensing, biomedical applications, security screening, video conferencing & real time multimedia file transfer, high speed and ultra low power digital integrated circuits.

Fig: 3D representation of InP high electron mobility transistor (InP HEMT)

8th EuroSOI-ULIS 2022 at University of Udine (Italy)

Organized by: University of Udine (Italy) Conference chair: Pierpaolo Palestri Local organizing Committee: Francesco Driussi David Esseni Daniel Lizzit Conference Secretariat: Centro Congressi Internazionali  Steering Committee: Francis BALESTRA (IMEP Minatec, France) Maryline BAWEDIN (IMEP-LAHC, France) Cor CLAEYS (KU-Leuven, Belgium) Bogdan CRETU (ENSICAEN, France) Sorin CRISTOLOVEANU (IMEP-LAHC, France) Francisco GAMIZ (UnivGranada, Spain) Elena GNANI (Univ. of Bologna, Italy) Benjamin INIGUEZ  (URV, Spain) Joris LACORD (CEA-Leti, France) Enrico SANGIORGI (Univ.Bologna, Italy) Luca SELMI (Univ. of Modena, Italy) Viktor SVERDLOV (TU Wien, Austria) Andrei VLADIMIRESCU (ISEP, France) Sponsors:

8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2022 May 18-20, 2022 – Udine, Italy https://eurosoiulis2022.com The Conference aims at gathering together scientists and engineers working in academia, research centers and industry in the field of SOI technology and nanoscale devices in More-Moore and More-Than-Moore scenarios. High quality contributions in the following areas are solicited: Advanced SOI materials and structures, innovative SOI-like devices. Alternative transistor architectures (FDSOI, Nanowire, FinFET, MuGFET, vertical MOSFET, FeFET and TFET, MEMS/NEMS, Beyond-CMOS). New channel materials for CMOS (strained Si/Ge, III-V, carbon nanotubes; graphene and other 2D materials). Properties of ultra-thin semiconductor films and buried oxides, defects, interface quality; thin gate dielectrics: high-κ and ferroelectric materials for switches and memory. New functionalities and innovative devices in the More than Moore domain: nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, integrated photonics (on SOI), etc. Transport phenomena, compact modeling, device simulation, front- and back-end process simulation. CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling; three-dimensional integration of devices and circuits, heterogeneous integration. Advanced test structures and characterization techniques, parameter extraction, reliability and variability assessment techniques for new materials and novel devices. Original 2-page abstracts with illustrations will be reviewed by the Scientific Committee. The accepted contributions will be published as 4-page letters in a special issue of the Elsevier journal Solid-State Electronics. Extended versions of outstanding papers will be published in a further special issue of Solid-State Electronics. A best poster award will be attributed by ELSEVIER.  The “Androula Nassiopoulou Best Paper Award" will be attributed by the SINANO institute. Important dates: abstract submission deadline: March 1, 2022 notification of acceptance: March 15, 2022

and in the same time

and in the same time: [https://t.co/9a1cshEmXN] Worldwide Silicon Wafer Shipments Reach Record High in Q3 2021 #semi #wafers #chips #semiconductor #chips #chipmaker #foundry https://t.co/TgXI1qc44M

— Wladek Grabinski (@wladek60) Nov 8, 2021

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from Twitter https://twitter.com/wladek60

November 08, 2021 at 02:08PM
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