Jan 19, 2023

Call for Papers - IEEE Special Issue of T-ED



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January 19, 2023 at 04:32PM
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#NIST and #Google to Create New Supply of #Chips for Researchers and Startups



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IEEE EDS MQ at NIT Silchar Silchar, Assam (IN)

IEEE EDS Mini-Colloquium 
on Micro/Nanoelectronics, Devices, Circuits and Systems, 
29-31 Jan 2023 (Hybrid Mode)

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Date: 29 Jan 2023
Time:10:00AM to 06:00PM
 (UTC+05:30) 
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National Institute of Technology Silchar
Dept of ECE,
NIT Silchar Silchar, Assam India 788010
Building: ECE/CSE Building


National Inst of Technology - Silchar,
ED15 Kolkata Section Chapter NANO42
Co-sponsored by Dr. Trupti R. Lenka


Starts
Dec.1, 2022
Ends
Jan.28,2023

No Admission Charge
Register NOW

Agenda with following contribution Distinguished Lecturers: 
  • Anil Kottantharayil (anilkg@ieee.org)
  • Gananath Dash (gndash@ieee.org)
  • Ajit Kumar Panda (akpanda62@hotmail.com)
  • Manoj Saxena (msaxena@ieee.org)
  • Brajesh Kumar Kaushik (bkkaushik23@gmail.com)
  • Samar Saha (samar@ieee.org)
  • Hiroshi Iwai (h.iwai@ieee.org)
  • Taiichi Otsuji (taiichi.otsuji.e8@tohoku.ac.jp)
  • Pei-Wen Li (pwli@nycu.edu.tw)
  • Zhou Xing (EXZHOU@ntu.edu.sg)
  • Albert Chin (albert_achin@hotmail.com)
  • Mansun Chan (mchan@ust.hk)
  • Chao-Sung LAI (cslai@mail.cgu.edu.tw)
  • Wladek Grabinski, MOS-AK, EU (wladek@grabinski.ch)

Jan 18, 2023

Neural networks and machine learning approach for compact modeling

[NN] Wang, Qiuwei, Mao Ye, Yao Li, Xiaoxiao Zheng, Jiaji He, Jun Du, and Yiqiang Zhao. "MOSFET modeling of 0.18 μm CMOS technology at 4.2 K using BP neural network." Microelectronics Journal (2023): 105678. DOI: 10.1016/j.sse.2022.108580

Highlights
  • The cryogenic characterization of SMIC CMOS technology at 4.2K is presented.
  • An optimization model VCCS is proposed to calibrate the cryogenic characteristics.
  • BP neural network is, for the first time, used in MOSFET modeling.
  • The cryo-model can be applied to SPICE simulator and assist in cryo-CMOS circuit design and simulation.
Fig: The structure of graph-based compact model of FinFET. The model receives the input features such as voltages, geometries, etc. as a vector and predicts the drain current (Ids) and its derivatives as output features.


[ML] Gaidhane, Amol D., Ziyao Yang, and Yu Cao. "Graph-based Compact Modeling (GCM) of CMOS transistors for efficient parameter extraction: A machine learning approach." Solid-State Electronics (2023): 108580.

Highlights
  • Developed a Graph-based compact model for FinFET.
  • Model implemented in Verilog-A for SPICE simulation.
  • Requires less number of model parameters and is computationally efficient than BSIM

[mos-ak] [Prennouncement] 7th Sino MOS-AK Workshop in Nanjing (CN)

Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
7th Sino MOS-AK Workshop in Nanjing (CN)
scheduled for August 11-13, 2023 (online/onsite)
Preannouncement and Call for Papers
Together with local host, as well as all the Extended MOS-AK TPC Committee, would like to invite you to the 7th Sino MOS-AK Workshop in Nanjing (CN) which will be organized as the online/onsite event on August 11-13, 2023 providing an opportunity to meet the internation modeling experts, engineers and researchers. A training course related to SiC topic (device modeling, packaging models, circuits, modules and final application) is planned for the first MOS-AK day, following by two days of the MOS-AK compact/SPICE modeling and its Verilog-A discussions. 

Upcoming, subsequent 7th Sino MOS-AK Workshop in Nanjing (CN) aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring academic and industrial experts in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors, in particular using Free open source PDKs.

Topics to be covered include the following among other related to the compact/SPICE modeling and its Verilog-A standardization:
  • Compact Modeling (CM) of the electron devices
  • Advances in semiconductor technologies and processing
  • Verilog-A language for CM standardization
  • New CM techniques and extraction software
  • Open Source (FOSS) TCAD/EDA modeling and simulation
  • CM of passive, active, sensors and actuators
  • Emerging Devices, Organic TFT, CMOS and SOI-based memory
  • Microwave, RF device modeling, high voltage device modeling
  • Nanoscale CMOS, BiCMOS, SiGe, GaN, InP devices and circuits
  • Technology R&D, DFY, DFT and reliability/aging IC designs
  • Foundry/Fabless Interface Strategies (eg: using Free open source PDKs)
Important Dates:
  • Call for Papers - Jan 2023
  • 2nd Announcement - April 2023
  • Final Workshop Program - July 2023
  • 7th Sino MOS-AK Workshop -  Aug. 11-13, 2023 (online/onsite)