[paper] Parameter Extraction Technique for IGBT Compact Model

N.V. Bharadwaj¹, Dr. P. Chandrasekhar² and Dr. M. Sivakumar³

A Consecutive Parameter Extraction Technique for IGBT Compact Model

ICMM-2019; AIP Conf. Proc. 2269, 030031-1–030031-5;

DOI: 10.1063/5.0019484

¹Geethanjali College of Enegineering and Technology, Hyderabad, 501301, India 

²MGIT, Hyerabad, 500075, India 

³Gudlavalleru Engineering College, Gudlavalleru , 521356, India

Abstract: A consecutive parameter extraction technique describes the fitting target related parameters for Insulated-gate bipolar transistor (IGBT) model. The IGBT model has been represented by a couple of simplified equivalent circuits. Using simulated data for a trench-type IGBT as reference the performance of compact model IGBT is compared to an IGBT macro model. Due to physics based modeling, parameter extraction with the compact model is fast. With very less extraction effort, the compact model fits the dc current and capacitance characteristics accurately.

FIG: The IGBT cell structure with cell pitch = 4μm and trench gate depth = 3μm

#China Forecast to Represent 22% of the #Semi #Foundry Market in 2020

#China Forecast to Represent 22% of the #Semi #Foundry Market in 2020 https://t.co/srxQlcd6TQ pic.twitter.com/2Mv0Fk5Arh

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Emerging Technologies Initiative (ETI)

Emerging Technologies Initiative (ETI)

What are classified as emerging technologies?

Emerging technologies have the potential to disrupt many existing industries and significantly impact employment, security, social equity, and global relations. However, it is important to note that disruptive innovations are not just a result of new technologies.  Incremental innovations in products and processes or aggregation of clustering of technologies can also combine to result in disruptive innovation – as seen recently in the case of several FinTech and AgriTech applications. 

For the purpose of this initiative, an indicative list of technologies are given below for the reference (including but not limited to):

What are the expected outcomes of ETI?

• Develop a critical mass of individuals/groups who are interested in thinking at the intersection of ‘Science & Technology’ and ‘International Engagement’
• Identify and prioritize the technologies of relevance and importance (present as well as future)
• Map technology and innovation hubs in India to anticipate the policy implications of the latest developments in emerging technologies
• Build a comprehensive Technology Intelligence Database (TID) for identified technologies. 
• Provide evidence-informed policy choices and program roadmaps for technology indigenization (reducing tech dependency and increasing domestic tech intensity)   
• Develop and strengthen the tech-knowledge capacity of central and state ministries, departments,  industries, accelerators and startups with the help of TID.
• Operationalize the technology indigenization roadmaps with identified stakeholders onboard
• Act as a synapsis amongst different stakeholders by facilitating the exchange of knowledge, expertise, and services to develop the emerging technology ecosystem.

[read more...]

Partners:

• The Office of the Principal Scientific Adviser to the Government of India (Office of PSA)
• New Emerging & Strategic Technologies Division in the Ministry of External Affairs (NEST, MEA #NESTMEA)
• Science Policy Forum (SPF)

[paper] Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

Wooseok Lee¹, Hyunuk Kang¹, Seokgyu Choi², Sangmin Lee², Hosang Kwon³, Keum cheol Hwang¹, Kang-Yoon Lee¹ and Youngoo Yang¹

Electronics 2020, 9(4), 632

DOI: 10.3390/electronics9040632

¹Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea
²Wavice Inc., Hwaseong-si 18449, Korea
³Agency for Defense Development, Daejeon 34186, Korea

Abstract This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit. The equivalent circuit of the interconnection circuit was extracted according to the EM simulation results. The large-signal model for the two-finger device is based on the conventional Angelov channel current model. The large-signal model for the 10-finger device was verified through load-pull measurement. The 10-finger GaN-HEMT produced an output power of about 20 W for both simulation and load-pull measurements. 

Fig: Two-finger GaN-HEMT: a) layout; b) equivalent SPICE subcircuit

Acknowledgement: The research reported in this work has been supported by ADD (Agency of Defense Development) of Korea under an R&D program (UC170025FD).