[paper] Parameter Extraction Technique for IGBT Compact Model

N.V. Bharadwaj¹, Dr. P. Chandrasekhar² and Dr. M. Sivakumar³

A Consecutive Parameter Extraction Technique for IGBT Compact Model

ICMM-2019; AIP Conf. Proc. 2269, 030031-1–030031-5;

DOI: 10.1063/5.0019484

¹Geethanjali College of Enegineering and Technology, Hyderabad, 501301, India 

²MGIT, Hyerabad, 500075, India 

³Gudlavalleru Engineering College, Gudlavalleru , 521356, India

Abstract: A consecutive parameter extraction technique describes the fitting target related parameters for Insulated-gate bipolar transistor (IGBT) model. The IGBT model has been represented by a couple of simplified equivalent circuits. Using simulated data for a trench-type IGBT as reference the performance of compact model IGBT is compared to an IGBT macro model. Due to physics based modeling, parameter extraction with the compact model is fast. With very less extraction effort, the compact model fits the dc current and capacitance characteristics accurately.

FIG: The IGBT cell structure with cell pitch = 4μm and trench gate depth = 3μm