[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V

[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V

— Wladek Grabinski (@wladek60) October 26, 2016

from Twitter https://twitter.com/wladek60

October 26, 2016 at 04:49PM
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Transistor Sizing for Bias-Stress Instability Compensation in Inkjet-Printed Organic C-Inverters https://t.co/91uJURy3KA #papers

Transistor Sizing for Bias-Stress Instability Compensation in Inkjet-Printed Organic C-Inverters https://t.co/91uJURy3KA #papers

— Wladek Grabinski (@wladek60) October 25, 2016

from Twitter https://twitter.com/wladek60

October 25, 2016 at 09:07PM
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[ESSDERC Paper] Compact model for variability of low frequency noise due to number fluctuation effect

Compact model for variability of low frequency noise due to number fluctuation effect

N. Mavredakis and M. Bucher

2016 46th European Solid-State Device Research Conference (ESSDERC)

Lausanne, Switzerland, 2016, pp. 464-467

doi:10.1109/ESSDERC.2016.7599686

Abstract: Variability of low frequency noise (LFN) in MOSFETs is both geometry- and bias-dependent. RTS noise prevails in smaller devices where noise deviation is mostly area-dominated. As device dimensions increase, operating conditions determine noise variability maximizing it in weak inversion and increasing it with drain voltage. This dependence is shown to be directly related with fundamental carrier number fluctuation effect. A new bias- and area-dependent, physics-based, compact model for 1/f noise variability is proposed. The model exploits the log-normal behavior of LFN. The model is shown to give consistent results for average noise, variance, and standard deviation, covering bias-dependence and scaling over a large range of geometry.

Keywords: compact models, Low-frequency noise, MOSFET, Reactive power, Semiconductor device modeling, Shape, Standards, MOSFET, low frequency noise, noise variability

URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7599686&isnumber=7598672

[SSE Paper] Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements

Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements 

Daniel Tomaszewski^a, Grzegorz Głuszko^a, Lidia Łukasiak^b,
Krzysztof Kucharski^a, Jolanta Malesinska^b

^aDivision of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), ul. Okulickiego 5E, 05-500 Piaseczno, Poland 

^bInstitute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland

Abstract: An alternative method for an extraction of the MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior as a function of the gate-source voltage. The effect of the channel current on the threshold voltage extraction is fully eliminated. For the threshold voltage and junction capacitance model parameters non-iterative methods have been used. The proposed method has been demonstrated using a series of MOS transistors manufactured using a standard CMOS technology.

Keywords: MOSFET CMOS Threshold voltage Junction capacitance Parameter extraction

Cite: Tomaszewski D et al. Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements. Solid State Electron (2016), http://dx.doi.org/10.1016/j.sse.2016.10.006

Sub-Minimum-Area MPW Sharing

Is Your Multi-Project Wafer Project Smaller Than the Fab Minimum Area?

Share the minimum area with other MPW customers to save mask costs

With the cost of mask sets going up with every node, even a multi-project wafer (MPW) can break your NRE budget, particularly if you plan to run multiple test spins. At 28nm, a 6mm2 area tile can cost over $100,000.

One solution is to share the minimum tile area with someone else who is using the same technology and metal stack that you are targeting. We periodically get these kinds of requests from customers. Please contact directly star@esilicon.com if you would like eSilicon to list your own MPW shuttle sharing opportunity, or if you would like eSilicon to contact you when future MPW tile sharing opportunities are available.

Following are upcoming opportunities to share a multi-project wafer (MPW) tapeout with another eSilicon customer. If you are interested, just email eSilicon.

Multi-Project Wafer Minimum Tile Sharing Opportunities for TSMC Technologies

Tapeout Month	Technology	Metal Stack	I/O	Price/mm2	Minimum Area	Final GDSII Due	Tapeout Date	Estimated Ship Date
October	65nm MS RF GP	1P9M_6x1z1u	2.5V	$4,700	1mm2	October 10	October 12	November 23
	65nm MS RF LP	1P9M_6x1z1u	2.5V	$4,700	1mm2	October 10	October 12	November 23
	180nm MS RF G	1P6M_4x1u	3.3V	$1,000	5mm2	October 24	October 26	December 7
November	40nm MS RF LP	1P10M	1.8V	$7,500	1mm2	October 31	November 2	January 17

[read more...]