A practical guide to SOI by Incize https://t.co/9JPT9AbwT1 #papers
— Wladek Grabinski (@wladek60) June 16, 2016
from Twitter https://twitter.com/wladek60
June 16, 2016 at 08:43AM
via IFTTT
Jun 16, 2016
A practical guide to SOI by Incize https://t.co/9JPT9AbwT1 #papers
from Twitter https://twitter.com/wladek60
June 16, 2016 at 08:43AM
via IFTTT
Jun 15, 2016
[mos-ak] [Final Program] International MOS-AK Workshop Shanghai June 26-28 2016
International MOS-AK Workshop
Shanghai, June 26-28, 2016
The Final MOS-AK Workshop Technical Program
Together with the MOS-AK Honorary Committee: Xi Wang (SIMIT), Tzu-Yin Chiu, (SMIC), Ming-Kai Tsai, (MediaTek SRC/CMC), the Extended MOS-AK TPC Committee as well as local organizers Min Zhang (SIMTAC) and Eva Tu (SIMTAC), we have pleasure to invite to the MOS-AK Workshop which will be held in Shanghai between June 26-28, 2016. The MOS-AK workshop is organized with aim to strengthen an academic/industry network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors. In addition, on June 26, 2016, dedicated compact modeling/characterization tutorial courses are also prepared for all workshop attendees.
Venue:
865 Changning Road, Building No. 5, on the 3rd Floor,Conference Hall,Changning District, Shanghai (CN)
Online Workshop Registration:
<http://www.simtac.org/?p=156&lang=zh>
(or contact MOS-AK Workshop Secretary: Eva Tu (Shanghai) <wanv.tu@simtac.org>)
The Workshop Agenda and its Program is available online:
<http://www.mos-ak.org/shanghai_2016/>
Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication in a special compact modeling issue of the International Journal of High Speed Electronics and Systems (IJHSES)
Extended MOS-AK Committee
Selected best MOS-AK technical presentation will be recommended for further publication in a special compact modeling issue of the International Journal of High Speed Electronics and Systems (IJHSES)
Extended MOS-AK Committee
WG15062016
You received this message because you are subscribed to the Google Groups "mos-ak" group.
To unsubscribe from this group and stop receiving emails from it, send an email to mos-ak+unsubscribe@googlegroups.com.
To post to this group, send email to mos-ak@googlegroups.com.
Visit this group at https://groups.google.com/group/mos-ak.
For more options, visit https://groups.google.com/d/optout.
[mos-ak] [Final Program] International MOS-AK Workshop in Shanghai on June 26-28, 2016
International MOS-AK Workshop
Shanghai, June 26-28, 2016
The Final MOS-AK Workshop Technical Program
Together with the MOS-AK Honorary Committee: Xi Wang (SIMIT), Tzu-Yin Chiu, (SMIC), Ming-Kai Tsai, (MediaTek SRC/CMC), the Extended MOS-AK TPC Committee as well as local organizers Min Zhang (SIMTAC) and Eva Tu (SIMTAC), we have pleasure to invite to the MOS-AK Workshop which will be held in Shanghai between June 26-28, 2016. The MOS-AK workshop is organized with aim to strengthen an academic/industry network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors. In addition, on June 26, 2016, dedicated compact modeling/characterization tutorial courses are also prepared for all workshop attendees.
Venue:
865 Changning Road, Building No. 5, on the 3rd Floor,Conference Hall,Changning District, Shanghai (CN)
Online Workshop Registration:
<http://www.simtac.org/?p=156&lang=zh>
(or contact MOS-AK Workshop Secretary: Eva Tu (Shanghai) <wanv.tu@simtac.org>)
The Workshop Agenda and its Program is available online:
<http://www.mos-ak.org/shanghai_2016/>
Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication in a special compact modeling issue of the International Journal of High Speed Electronics and Systems (IJHSES)
Extended MOS-AK Committee
Selected best MOS-AK technical presentation will be recommended for further publication in a special compact modeling issue of the International Journal of High Speed Electronics and Systems (IJHSES)
Extended MOS-AK Committee
WG15062016
You received this message because you are subscribed to the Google Groups "mos-ak" group.
To unsubscribe from this group and stop receiving emails from it, send an email to mos-ak+unsubscribe@googlegroups.com.
To post to this group, send email to mos-ak@googlegroups.com.
Visit this group at https://groups.google.com/group/mos-ak.
For more options, visit https://groups.google.com/d/optout.
[book] Compact Models for Integrated Circuit Design
Compact Models for Integrated Circuit Design:
Conventional Transistors and Beyond
Samar K. Saha
Taylor & Francis, 26 Aug 2015 - Technology & Engineering - 545 pages - ISBN 9781482240665
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices.
Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text:
- Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models
- Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models
- Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis
- Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices
- Includes exercise problems at the end of each chapter and extensive references at the end of the book
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book. [more...]
Jun 13, 2016
Programme of the 4th Training Course on Compact Modeling
The 4th Training Course on Compact Modeling (TCCM) will take place in Tarragona (Catalonia, Spain) from June 27 to 28 2016.
The 4th TCCM is partially sponsored by the DOMINO EU H2020 project. It will consist a series of lectures conducted by prestigious researchers in the field of modeling of semiconductor devices, dealing with several issues related to the semiconductor device modeling, mostly compact/SPICE modeling. It is a very interesting event to PhD students and young researchers, but can interest senior researchers too. These lectures will be conducted by top experts in the field.
No doubt the 4th TCCM will be useful to researchers working on compact modeling, but also to researchers working on circuit design, numerical modeling, device characterization and semiconductor device technology.
TCCM is organized by the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV), in Tarragona. The General Chair of TCCM is Prof. Benjamin Iñiguez, who is also the Coordinator of the DOMINO project.
Programme of TCCM:
Programme of TCCM:
June 27 2016
|
|
8:30
|
Opening
Benjamin Iñiguez (Universitat Rovira i Virgili)
|
8:55
|
"Compact modeling for biological
applications".
Morgan Madec (Université de Strasbourg, France)
|
10:05
|
"TCAD and semiclassical device modeling"
Christoph
Jungemann (RWTH-AAchen, Germany)
|
11:15
|
Coffe Break
|
11:40
|
"Modeling
and experimental verification of mechanical stress effects in
ultra-thin Si MOSFET devices integrated into flexible packages. "
Heidrun Alus
(AdMOS GmbH, Germany)
|
12:50
|
"Device
simulation for Organic Electronics using GENIUS"
Heinz Olav Müller (Plastic Logic GmbH,
Germany))
|
14:00
|
Lunch
|
15:15
|
"TCAD for compact model development"
Ahmed Nejim
(Silvaco Europe Ltd. , UK)
|
16:25
|
"Modelling of Amorphous-Oxide-Semiconductors TFTs
for large-area flexible electronics"
Fabrizio Torricelli (University of
Brescia, Italy)
|
20:30
|
Gala Dinner
|
June 28 2016
|
|
8:45-14:00 Mini-Colloquium on Compact Modeling and
Parameter Extraction
|
|
8:45
|
"An
Integrated Approach for Circuit Performance and Reliability Simulation"
Mansun Chan (Hong Kong University of
Science and Technology)
|
9:55
|
"Static and dynamic characterization of SiC based
MOSFETs/IGBTs"
Muhammad Nawaz (ABB Sweden)
|
11:05
|
Coffee Break
|
11:30
|
“Model
parameter extraction”
Antonio Cerdeira
(CINVESTAV Mexico)
|
12:50
|
"Compact
modeling for AlGaN/GaN HEMTs"
Benjamin Iñiguez
(URV)
|
14:00
|
Lunch
|
15:15
|
"Application
of compact models for organic circuit design"
Eugenio Cantatore (TU-Eindhoven, The
Netherlands)
|
16:25
|
« Mathematical
and Semi-physical compact modeling for emerging technologies”
Firas Mohamed (Infiniscale, France)
|
17:35
|
End of the
Training Course
|
Besides, on June 29 1016, the Workshop on Flexible Electronics (WFE) will take place in Tarragona, too. Attendees to TCCM who work on Flexible Electronics (not necessarily modeling) will have a chance to present recent results on their own. But WFE is open to all researchers.
Finally, on June 30-July 1 the Annual Graduate Student Meeting on Electronic Engineering will be held, consisting of plenary talks by prestigious researchers and student presentations. Registration is free.
I encourage researchers on semiconductor devices and circuit design to attend TCCM!
Subscribe to:
Posts (Atom)