[C4P] LASCAS 2024

 

LASCAS 2024

An IEEE CASS Flagship Conference

15th IEEE LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS

February 27 - March 01, 2024

ieee-lascas.org

PUNTA DEL ESTE - URUGUAY

Since its first edition in 2010, LASCAS provides a high-quality exchange and networking forum for researchers, professionals, and students, gathering an international audience with experts from all over the world. This event is a space where the CAS community can present new concepts and innovative approaches, learn about new trends and solutions, and receive feedback from specialists in diverse fields.

The 15th edition will take place in Punta del Este, Uruguay. With its lush landscapes, pristine beaches, and sophisticated amenities, it has established itself as a premier tourist destination in South America. It offers an unparalleled experience, where visitors can immerse themselves in a rich blend of natural beauty and modern luxury. The city is easily accessible by air, with regular flights from major cities in South America, and just 90 minute from Montevideo and its international airport. Punta del Este is ready to receive you. The symposium will cover technical novelties and tutorial overviews on circuits and systems topics including but not limited to:

● Analog and Digital Signal Processing

● Biomedical Circuits and Systems

● Intelligent Sensor Systems and Internet of Things

● Artificial Intelligence and Smart Systems

● Nanoelectronics and Gigascale Systems

● Electronic Design Automation

● Circuits and Systems for Communications

● RF Circuits and Systems

● Smart Systems and Smart Manufacturing

● Power Systems and Power Electronic Circuits

● Multimedia Systems and Applications

● Life Science Systems and Applications

● Electronic Testing

● Fault Tolerant Circuits

● Nonlinear Circuits and Systems

● Cognitive Computing and Deep Learning

● Computing and Big Data Applications

Accepted papers will be submitted for inclusion into IEEE Xplore subject to meeting IEEE Xplore’s scope and quality requirements. Best papers will be invited to a special edition of the IEEE Transactions on Circuits and Systems I (TCAS-I) and IEEE Transactions on Circuits and Systems II (TCAS-II). A social program will be offered, including special events and tours to selected attractions for the attendees and their guests.

General Chairs:

Dr. Matías Miguez – UCU, Uruguay. 

Dr. Pablo Pérez-Nicoli – Udelar, Uruguay. 

Program Chairs:

Dr. Maysam Ghovanloo –Silicon Creations, USA

Dr. José Lipovetzky – IB-CNA, Argentina

SB-MOS Symposium at URV Tarragona (SP)

The Symposium on Schottky Barrier MOS (SB-MOS) devices is held in the timeframe of the Graduated Students Meeting of URV on June 30th at the University Rovira i Virgili, Spain. This is the first joint R&D event between the URV and Symposium on SB-MOS.

This year the joint R&D event is sponsored by the URV, THM, the IEEE EDS Spain & Germany Chapter, and organized by Dr. Laurie Calvet (C2N, Palaiseau, France), Prof. Mike Schwarz and Prof. Alexander Kloes (NanoP THM, Germany), Prof. Lluis Marsal (DEEEA, URV), and Prof. Benjamin Iniguez (DEEEA, URV) and the staff at the URV.

Our joint R&D event starts on June 30th with the Symposium of SB-MOS. On July 1st and July 2nd the Graduated Students Meeting is held. The following speakers have confirmed their invitations to SB-MOS: Dr. Radu Sporea (Advanced Technology Institute, University of Surrey, Guildford, UK), Dr. Laurie E. Calvet (C2N, CNRS-Université Paris-Sud, France), Prof. Walter Weber (TU Vienna) and further.

Attendees are welcome to participate in our joint R&D event. Further information is present at

Symposium of SBMOS

Graduated Student Meeting

To register for the event use the vTools of IEEE with the following link:
https://meetings.vtools.ieee.org/m/272299

Important dates:

• Event Announcement/CFP: May 2021
• Final Program: June 2021
• Registration deadline: June 27, 2021
• Symposium SB-MOS devices: June 30, 2021
• Graduated Students Meeting on Electronics Engineering: July 1st - 2nd, 2021

[symposium] ISDCS 2021 Hiroshima University

ISDCS 2021

3-5, March 2021

Hiroshima University, Higashi-Hiroshima, Japan

The ISDCS is a premium international forum for scholars, scientists, educators, students and engineers to exchange their latest findings and technological advances in the field of devices, circuits and systems.

Keynote Speakers

• Prof. Parthasarathi Chakrabarti, Director, IIEST Shibpur and Department of Electronics Engineering, IIT(BHU), India
  "Advanced Materials and Methods for Fabrication of Thin-film Transistor (TFT)-based Sensors"
• Prof. Shinji Kaneko, Hiroshima University, Japan
  "SDGs Initiatives at Hiroshima University: Integrating Global Strategy and Regional Vitalization"

Invited Speakers

• Prof. Sanatan Chattopadhyay, University of Calcutta, India
  "Voltage Assisted Quantum Dot Based MOS Devices for Electronic and Optoelectronic Applications"
• Prof. Partha Bhattacharya, IIEST Shibpur, India
  "Performance Improvement of Graphene Derivative based Gas sensors: Role of Functional Group Tuning and Ternary Junction Formation"
• Prof. Hafizur Rahaman, IIEST Shibpur, India
  "Tunnel Field Effect Transistors: Challenges and Opportunities"
• Prof. Nillohit Mukherjee, IIEST Shibpur, India
  "Metal Oxide Semiconductors with Carbon Nanomaterials for Efficient Supercapacitive Type Energy Storage Devices"
• Prof. Shigeyasu Uno, Ritsumeikan University, Japan
  "Electrochemical Impedance Sensor for Non-invasive Living Cell Monitoring toward CMOS Cell Culture Monitoring Platform"
• Mr. Shigeru Shiratake, Corporate Vice President, DRAM, Emerging Memory Process Integration and Device Technology Micron Technology, Inc., USA
  "Challenges for DRAM scaling and performance enhancement"
• Prof. Rihito Kuroda, Tohoku University, Japan
  TBD

Previous Conference:

• ISDCS 2020, Kolkata, India
• ISDCS 2019, Higashi-hiroshima, Japan
• ISDCS 2018, Kolkata, India

Symposium on Schottky Barrier MOS Devices 2018

"devil of savior"

It is the 40th anniversary of Institut für Halbleitertechnik und Nanoelektronik (IHTN) of the TU Darmstadt, Germany. In addition to many activities in September, a small symposium on Schottky Barrier MOS (SB-MOS) devices is planned for August 7th in Darmstadt. This is the second meeting of an enthusiastic group of Schottky barrier researchers and this year it is sponsored by the EDS German chapter and hosted by the IHTN of TU Darmstadt.

This year the symposium is organized by Dr. Tillmann Krauss, Dr. Udo E. Schwalke, Dr. Mike Schwarz and the staff of the TU Darmstadt. The symposium starts at 11:00 am in the lecture hall at the ITHN TU Darmstadt. 

The following agenda is planned:






AGENDA:

11:00 – 11:15 Welcome and introduction by Prof. Schwalke
11:15 – 11:30 “Wrap-Up of Schottky Barrier Simulation Methodologies”, Dr. Mike Schwarz (Robert Bosch GmbH, NanoP THM) (15mins)
11:30 – 12:00 “DC/AC compact modeling of Tunnel-FETs”, Prof. Alexander Kloes (NanoP THM) (30mins)
12:00 – 12:30 “Benefits of Schottky Barrier vs. Conventional Doped Source/Drain MOS devices”, Dr. John Snyder (JCap, LLC) (30mins)
12:30 – 13:30 “Lunch”
13:30 – 14:00 “Nanowire Schottky devices”, Dr. Walter Weber (TU Dresden) (30mins)
14:00 – 14:30 “Nanoelectronics: From Silicon to Carbon”, Prof. Udo Schwalke (TU Darmstadt) (30mins)
14:30 – 14:45 “Coffee Break”
14:45 – 15:15 “Transfer-free fabrication of nanocrystalline graphene field-effect sensors”, Dennis Noll (TU Darmstadt) (30mins)
15:15 – 15:45 “Modeling of neuromorphic devices”, Dr. Laurie E. Calvet (Université Paris-Sud) (30mins)

Attendees are welcome to attend the symposium. Further information are present at http://www.iht.tu-darmstadt.de/ihtn_institute/