Nov 16, 2016

National Workshop on Advanced Nanoscale Device Design Using TCAD

The National Workshop on Advanced Nanoscale Device Design Using Technology Computer-Aided Design (TCAD) was organized by the IEEE SolidState Circuits Society (SSCS) College of Engineering Chengannur, India Chapter. The workshop was held 28 December 2015 through 1 January 2016 as a three-day tutorial and two-day handson session. The event was graced with the presence of distinguished lecturers from top institutions in India, including Prof. Yogesh S. Chouhan from IIT Kanpur delivering the keynote talk. The workshop attracted approximately 150 participants from 15 reputable academic institutions. People from industry and also attended the event.
The coordinators were proud to present a successful workshop as one of the first events since the formation of the Chapter. The event was funded by the SSCS extra subsidy program. The feedback received from the attendees was very positive. Each participant received a certificate during the closing ceremony of the event. The five-day workshop came to an end by the heartfelt vote of thanks by Nisha Kuruvilla, with a motto “This is just the beginning.” [read more...]

Nov 15, 2016

[paper] Analysis of aging effects - From transistor to system level

Analysis of aging effects - From transistor to system level
Maike Taddiken*, Nico Hellwege, Nils Heidmann, Dagmar Peters-Drolshagen, Steffen Paul
Institute of Electrodynamics and Microelectronics,
University of Bremen, Otto-Hahn-Allee 1, Bremen 28359,Germany

ABSTRACT: Due to shrinking feature sizes in integrated circuits, additional reliability effects have to be considered which influence the functionality of the system. These effects can either result from the manufacturing process or external influences during the lifetime such as radiation and temperature. Additionally, modern technology nodes are affected by time-dependent degradation i.e. aging. Due to the age-dependent degradation of a circuit, processes on the atomic scale of the semiconductor material lead to charges in the oxide silicon interface of CMOS devices, altering the performance parameters of the device and subsequently the behavior of the circuit. With the continuous downscaling of modern semiconductor technologies, the impact of these atomic scale processes affecting the overall system characteristics becomes more and more critical. Therefore, aging effects need to be assessed during the design phase and actions have to be taken guaranteeing the correct system functionality throughout a system’s lifetime. This work presents methods to investigate the influence of age-dependent degradation as well as process variability on different levels. An operating-point dependent sizing methodology based on the gm/ID method extended to incorporate aging, which aims at developing aging-resistent circuits is presented. The basic idea of the gm/ID sizing method is the dependence of the operating point of a MOS transistor on the state of inversion in the channel, its strong relation to circuit performance and the possibility to calculate transistor dimensions.The inversion coefficient IC is a fundamental metric within the gm/ID method and numerically represents the inversion level of a MOS device formally described in the EKV MOS model. Additionally, the sensitivity of circuit performances in regard to aging can be determined. In order to investigate the reliability of a complex system on behavioral level, a modeling method to represent the performance of system components in dependence of aging and process variability is introduced. [read more...]

Nov 11, 2016

ICNF 2017: 2nd Call for Papers

24th International Conference on Noise and Fluctuations (ICNF 2017) 
20-23 of June 2017 in Vilnius, Lithuania

We would like to invite you to submit your abstracts. For submission of the abstracts, please, REGISTER and go to the Abstract submission site. Instruction for authors and templates for abstract preparation can be found and downloaded  at the Conference website: http://www.icnf2017.ff.vu.lt/paper-submission/instructions-for-authors
Deadline of the abstract submission is 22 January, 2017

Please also keep in mind ICNF2017 important dates:
  • Abstract submission deadline: 22 January, 2017
  • Notification of acceptance deadline: 27 February, 2017
  • Full paper submission deadline:27 March, 2017
  • Early bird registration: 19 April, 2017
  • Conference: 20-23 June, 2017
Please share this information to your colleagues and those who might be interested in ICNF 2017.

For more information visit the Conference website: http://www.icnf2017.ff.vu.lt/
or contact us: icnf2017@ff.vu.lt

Looking forward to meeting you in Vilnius.

With best regards,
Sandra Pralgauskaitė and Paulius Sakalas - Organizing Committee Chairs


Nov 10, 2016

[mos-ak] [Final Program] 9th International MOS-AK Workshop Berkeley DEC.7, 2016

9th International MOS-AK Workshop  
  Berkeley December 7, 2016 
    Final Workshop Program 
 
Together with the MOS-AK workshop host, Prof. Jaijeet Roychowdhury, UCB and International MOS-AK Board of R&D Advisers: Larry Nagel, Omega Enterprises Consulting (USA), Andrei Vladimirescu, UCB (USA); ISEP (FR) as well as all the Extended MOS-AK TPC Committee, we have pleasure to invite to the 9th International MOS-AK Workshop which will be held at EECS Department, University of California, Berkeley on December, 7, 2016. Planned MOS-AK workshop is organized with aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors. 

Important Dates:
  • Preannouncement - Sept. 2016
  • Call for Papers - Oct. 2016
  • Final Workshop Program - Nov. 2016
  • MOS-AK Workshop - Dec. 7 2016
    •   9:00-12:00 Morning Session
    • 13:00-16:00 Afternoon Session
Venue:
540 Cory Hall 
EECS Department
University of California, Berkeley
Directions to the DOP Center in Cory Hall
See also http://www.eecs.berkeley.edu/Directions/
Final MOS-AK/Berkeley Workshop Program Online 
http://www.mos-ak.org/berkeley_2016/

Online Workshop Registration:
http://www.mos-ak.org/berkeley_2016/registration.php
(any related inquiries can be sent to register@mos-ak.org)

Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication in a special issue of the International Journal of High Speed Electronics and Systems

Extended MOS-AK Committee

WG10112016

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Nov 8, 2016

[mos-ak] [press note] 14th MOS-AK ESSDERC/ESSCIRC Workshop

Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
14th MOS-AK ESSDERC/ESSCIRC Workshop
Lausanne, September 12, 2016

The MOS-AK Modeling Working Group, a global compact/SPICE modeling and Verilog-A standardization forum, held its annual autumn workshop on September 12, 2016 in Lausanne (CH) as its 14th consecutive modeling event at the ESSDERC/ESSCIRC Conference. The event was coordinated by Larry Nagel, OEC (USA) and Andrei Vladimirescu, UCB (USA); ISEP (FR) representing the International MOS-AK Board of R&D Advisers. The workshop was co-sponsored by ASCENT Network (lead sponsor) and EPFL EDLab, with technical program sponsorship provided by the IEEE WiE Group (CH), Eurotraining and NEEDS of nanoHUB.org.

 

A group of the international academic researchers and modeling engineers attended 12 technical compact modeling presentations covering full development chain form the nanoscaled technologies thru semiconductor devices modeling to advanced IC design support. The MOS-AK speakers have shared their latest perspectives on compact/SPICE modeling and Verilog-A standardization in the dynamically evolving semiconductor industry and academic R&D. 

 

The workshop was opened by Prof. J. Greer; Tyndall National Institute, the MOS-AK keynote speaker, who has introduced the ASCENT Network. The ASCENT is combined resources of Tyndall (Ireland), imec (Belgium) and Leti (France) nanofabrication capabilities and electrical characterization facilities integrated into a single research infrastructure present a truly unique R&D opportunity. It provides characterization community with access to advanced test chips, flexible fabrication and advanced test and characterization equipment to accelerate development of advanced models at scales of 14nm and below.

 

The event featured additional technical presentations covering compact model development, implementation, deployment and standardization. These contributions were delivered by leading academic and industrial experts, including: Denis Rideau; STM (F), presenting a modeling study of the drain current in advanced MOSFETs. Maria-Alexandra Paun; EPFL (CH), focusing on the humidity sensors based on MWCNTs/MMA composite in SOI CMOS technological process. Mike Brinson; London Met (UK), presenting QUCS-S - maturing GPL software package for circuit simulation and compact modeling of current and emerging technology devices. Alexander Kloes; THM Giessen (D), discussing a closed-form charge-based current model of organic TFT including non-linear injection effects. Jean-Michel Sallese; EPFL (CH), discussing an advances in analytical modeling. Marco Bellini, ABB CRC (CH), presenting extraction of compact models for EMI / EMC simulations of power devices. Muhammad Nawaz; ABB CRC (S), reviewed characterization and modeling of SiC MOSFET power modules. Mansun Chan; HKUST (HK), discussing concurrent device and circuit reliability simulation. Benjamin Iñiguez; URV (SP), talking about temperature dependent GIZO TFT modeling. Mike Schwarz; THM (D), discussing analytical III-V SB MOSFET modeling and its performance analysis from room to cryogenic temperature. Matthias Bucher; TUC (GR), giving an EKV3 model update. The presentations are available online for download at http://www.mos-ak.org/lausanne_2016

 

The MOS-AK Modeling Working Group has various deliverables and initiatives including a book entitled "Open Source CAD Tools for Compact Modeling" and an open Verilog-A directory with models and supporting CAD software. The MOS-AK Association plans to continue its standardization efforts by organizing additional compact modeling meetings, workshops and courses in Europe, USA, India and China throughout 2016/2017 including:


* 9th International MOS-AK Workshop at Berkeley in the timeframe of IEDM and CMC meetings (Dec.7, 2016) 

* Spring MOS-AK Workshop in Lausanne during DATE Conference (March 31 2017)

* 2nd Sino MOS-AK Workshop in Hangzhou (June 2017)

* 15th MOS-AK ESSDERC/ESSCIRC Workshop in Leuven (Sept.11, 2017)

 

About MOS-AK Association:

MOS-AK, an international compact modeling association primarily focused in Europe, to enable international compact modeling R&D exchange in the North/Latin Americas, EMEA and Asia/Pacific Regions. The MOS-AK Modeling Working Group plays a central role in developing a common language among foundries, CAD vendors, IC designers and model developers by contributing and promoting different elements of compact/SPICE modeling and its Verilog-A standardization and related CAD/EDA tools for the compact models development, validation/implementation and distribution.

 

About ASCENT Network:

ASCENT provides fast and easy access to the world's most advanced CMOS technologies and infrastructure including access to 14nm CMOS device data, nanoscale test chips and device characterisation facilities at Tyndall (Ireland), imec (Belgium) and Leti (France). ASCENT has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 654384.

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