Kalra, S, Bhattacharyya, AB.
A Unified Analytical Transregional MOSFET Model for Nanoscale CMOS Digital Technologies
Int J Numer Model. 2020; 33:e2700
https://doi.org/10.1002/jnm.2700
Abstract: For IC designers, power has always been the main design constraint. Near threshold (moderate inversion) computing is a promising technique to manage power and energy requirements. A modeling framework specific to moderate inversion is developed in literature known as Transregional Mosfet Model (TRM). This paper presents an extension of TRM model by considering the lateral and vertical field dependent mobility of carriers that make it suitable for circuit design at supply voltages not restricted to near threshold voltage. The model proposed is the unified model applicable in all operating regions (weak, moderate, and strong) and all saturation levels from a long channel with negligible effect of velocity saturation to a short channel having extreme velocity saturation. Further, it has been shown that the proposed drain current model can be reduced to unified interpolated expression of EKV model for long channel MOSFET.
FIG: Comparison of (A) proposed model, (B) weak inversion approximation, (C) strong inversion approximation, with transregional MOSFET model (TRM) and BSIM4 at 22nm technology node.
