[paper] Compact Models for IGBTs

Advanced physics-based compact models for new IGBT technologies

Arnab Biswas, Maria Cotorogea

Infineon Technologies AG, Germany

Abstract The TRENCHSTOP™ IGBT7 technology is based on the latest micro-pattern trench technology. It provides strongly reduced losses offering a high level of controllability [1]. This technology brings forward new challenges in compact modelling. Current IGBT compact models at Infineon are physics-based subcircuit representations in SPICE syntax. They were developed to run in the circuit simulator SIMetrix, and are manually calibrated. The aim of this work is to present advanced models for the micro-pattern trench IGBT implemented in Verilog-A language, addressing the challenges of compact models in terms of calibration accuracy, simulation run time, model robustness and portability to multiple simulators.

Fig. 3: IGBT technology overview showing schematically

the static excess-carrier density distribution in the plasma region.

[paper] Thyristor Conduction-Insulated Gate Bipolar Transistor

Mengxuan Jiang¹ (Member, IEEE) and Longjiang Gao¹

Simulation Study of a Thyristor Conduction-Insulated Gate Bipolar Transistor (TC-IGBT) 

with a p-n-p Base and an n-p-n Collector for Reducing Turn-Off Loss," 

IEEE TED, vol. 67, no. 7, pp. 2854-2858, July 2020

DOI: 10.1109/TED.2020.2995343

¹School of Electrical Engineering, Chongqing University, Chongqing 400044, China

Abstract: This article proposes a thyristor conduction-insulated gate bipolar transistor (TC-IGBT) with a p-n-p base and an n-p-n collector to reduce turn-off loss. The parasitic p-collector/n-drift/floating p (FP)-layer/carrier stored (CS)-layer thyristor is activated by the double channel gate and the p-n-p base acts a hole barrier to increase hole concentration at the top side. The n-p-n collector is used for extracting electrons from the n-drift region to decrease hole concentration at the bottom side. Therefore, these two effects form linear and descending hole concentration distribution profile. As a result, the p-n-p base and the n-p-n collector in the TC-IGBT offers lower turn-off loss and turn-off fall time. TCAD numerical simulations show reductions up to 47% (3.15 mJ) and 52% (34 ns) in turn-off loss and turn-off fall time, respectively, when compared to a field stop (FS) IGBT with similar breakdown voltage, threshold voltage, and short circuit time. Therefore, this designed structure may be attractive for power electronics applications.

Fig: (a) Proposed TC-IGBT and (b) its equivalent circuit model

Acknowledgment: This work was supported in part by the National Natural Science Foundation of China under Grant 51707025 and in part by the Chinese Universities Scientific Fund under Grant 106112017 CDJXY150099.