Showing posts with label Simulator. Show all posts
Showing posts with label Simulator. Show all posts

Oct 30, 2023

[paper] DEVSIM

Sanchez, J. E.,
DEVSIM: A TCAD Semiconductor Device Simulator
Journal of Open Source Software, 7(70), 3898, (2022).
DOI:10.21105/joss.03898

Abstract: DEVSIM is technology computer-aided design (TCAD) software for semiconductor device simulation. By solving the equations for electric fields and current flow, it simulates the electrical behavior of semiconductor devices, such as transistors. It can be used to model existing, fabricated devices for calibration purposes. It is also possible to explore novel device structures and exotic materials, reducing the number of costly and time-consuming manufacturing iterations While DEVSIM has limited capabilities for the creation of 1-D and 2-D meshes, the Pythoninterface allows the import of mesh structures from any format using a triangular representation (in 2-D) or a tetrahedral representation (in 3-D). This makes it possible for the user to utilize high quality open source meshing solutions.

FIG: 90-nm 3-D MOSFET. The polysilicon gate (2) is surrounded by oxide (5) and two nitride regions (3) and (4). The bulk region (1) has a 120nm drawn gate length. The source and drain contacts are both 50 nm underneath the nitride regions. A body contact was placed on the bottom of the 60nm silicon region. The oxide thickness is 4.9 nm and the device is 25nm thick.


Aug 5, 2021

[paper] Modeling and investigation of SET Inverter Circuit

C. Shyamala, V. Kalpana
Modeling and investigation of SET Inverter Circuit
International Journal of Innovative Research in Engineering 25 
Vol. 2, Issue 3 (May-June 2021), pp: 25-28 
ISSN No: 2582-8746; www.theijire.com

* Department of EEE, RV College of Engineering, VTU University, Karnataka. India.

Abstract: This paper presents an analytical model Inverter based on the theory of single electron transistor(SET). The proposed design is very flexible such that it can be used for single gate, multi-gate, symmetric, asymmetric devices and most importantly it can also consider the effect of background charge. It can also be used for large voltage range of drain-source voltage irrespective of the bias conditions. The proposed design has been simulated with SPICE and the characteristics produced by the proposed design have been verified against Monte Carlo simulator SIMON [1].
Fig: Schematic diagram of single electron inverter

Reference:
[1] SIMON - A single electron device and circuit simulator
https://www.lybrary.com/simon/examples.html