C. Shyamala, V. Kalpana
Modeling and investigation of SET Inverter Circuit
International Journal of Innovative Research in Engineering 25
Vol. 2, Issue 3 (May-June 2021), pp: 25-28
ISSN No: 2582-8746; www.theijire.com
* Department of EEE, RV College of Engineering, VTU University, Karnataka. India.
Abstract: This paper presents an analytical model Inverter based on the theory of single electron transistor(SET). The proposed design is very flexible such that it can be used for single gate, multi-gate, symmetric, asymmetric devices and most importantly it can also consider the effect of background charge. It can also be used for large voltage range of drain-source voltage irrespective of the bias conditions. The proposed design has been simulated with SPICE and the characteristics produced by the proposed design have been verified against Monte Carlo simulator SIMON [1].
Fig: Schematic diagram of single electron inverter
Reference:
[1] SIMON - A single electron device and circuit simulator
https://www.lybrary.com/simon/examples.html
