[C4P] EDTM 2025 in Hong Kong, China

The 9th IEEE Electron Devices Technology and Manufacturing Hong Kong, China, March 9th – 12th, 2025 Theme: Shaping the Future with Innovations in Devices and Manufacturing Call for Papers Three-page camera-ready paper submission starts: August 15, 2024 Paper submission deadline: October 15 October 31, 2025 Notification for Acceptance: December 15, 2024 https://edtm2025.com/ Technical Areas EDTM 2025 solicits papers in all areas of electronic devices, including materials, processes, modeling, device/circuit/system design, reliability, packaging, manufacturing, testing, and yield. EDTM 2025 will include parallel technical sessions of oral and poster presentations. Publication Opportunities The accepted and presented papers will be published in the EDTM 2025 Proceedings, included in IEEE Xplore. The authors of a selected number of high-impact papers will be invited to submit extended versions for publication in the special issue of IEEE Journal of Electron Devices Society (J-EDS) or IEEE Transactions on Electron Devices, subjected to J-EDS and TED policy. Short Courses and Tutorials EDTM 2025 will start with a set of short courses and tutorials on March 9, 2025. Tutorials will cover selected topics from the basics to the state-of-the-art. The Short Courses will discuss the latest research and challenges on emerging and advanced topics. Exhibition EDTM 2025 offers vendors to showcase their newest products and technologies, allowing attendees to learn about new tools and techniques. Award Opportunities EDTM 2025 offers one Best Paper Award in each sub-technical area.

General Chair： Yang Chai (HK PolyU) General Co-Chair： Tim Cheng (HKUST) TPC Chair： Mansun Chan (HKUST) TPC Co-Chair： Yansong Yang (HKUST) Steering Committee: Shuji Ikeda (TEI Solutions) – Chair Bin Zhao (CTI) Arokia Nathan (Cambridge U.) Ravi Todi (Synopsys) Murty Polavarapu (BAE) Roger Booth (Qualcomm) Samar Saha (Prospicient Devices) Albert Wang (UC Riverside) Kazunari Ishimaru (Rapidus) Yogesh Chauhan (IIT Kanpur) Executive Committee: Yang Chai (HK PolyU) Roger Booth (Qualcomm) Mansun Chan (HKUST) Yansong Yang (HKUST) Ru Huang (Southeast) Qiming Shao (HKUST) Merlyne De Souza (U Sheffield) Pei-Wen Li (NCTU) Can Li (HKU) Masumi Saito (Kioxia) Zhongrui Wang (HKU) Meiki Ieong (Simbury) Carmen Fung (HKSTP) Man Hoi Wong (HKUST) Roger Booth (Qualcomm) Huaqiang Wu (Tsinghua) Rino Choi (Inha U.) Bernard Lim (Appscard) Shinichi Yoshida (SONY) Bill Nehrer (Atomera) Bich-Yen Nguyen (SOITEC) Benjamin Iniguez (URV) Edmundo Gutierrez (INAOE) Ming Yang (HK PolyU)

[Short Course] MACHINE LEARNING FOR ELECTRON DEVICES

Short Course on

MACHINE LEARNING FOR ELECTRON DEVICES

3-6 October 2023, IIT Roorkee

Four day residential program to learn and explore the role of Machine Learning in shaping the future of the semiconductor EDA.

KEY HIGHLIGHTS

• Lectures from basic machine learning to advanced ideas
• Hands-on tutorials for developing your own Machine learning models
• Excellent networking opportunity
• Interaction with experts from industry and academia
• UG Fellowships up to ₹ 10000/month for selected participants
• Funding opportunity upto INR 40Lacs as start-up seed grant for selected ideas

EVENT SCHEDULE <http://ece.iitr.ac.in/diraclab/mled23/>

Virtual Si Museum /2101/ Electron Devices Time Line

my own view on the electron devices time line. The electron devices scaling: from a single vacuum tube, a BJT, TTL digital ICs to 68719476736 devices in a NAND flash memory card. If you have something else to add, just let me know:

REF:

1. Vacuum Tube GE 9-22 188-5
2. 2N2905A BJT - PNP, -60 V, -600 mA, 600 mW, TO-39
3. TTL 74F00 IC - 5V, quad 2-input NAND gate; series F (=fast) introduced in 1978
4. 64Gb NAND flash memory card