Sponsorship:
Sponsored by:
- IEEE MTT-S Japan Chapter
- IEEE AP-S Japan Chapter
- IEEE VT-S Japan Chapter
- IEEE SSC-S Japan Chapter
Location: Toshiba Science Museum (directions from Komukaitoshiba town)
Entry fee: Free
Program
12:15 - 12:30 Reception
12:30 - 13:15 Toshiba Science Museum tour
13:30 - 13:40 Opening Remarks Masahiro Morikura (Kyoto University)
13:40 - 14:20 "High frequency modeling of the MOSFET, including the process variation" Yoshitomi Sadayuki (Toshiba)
14:20 - 15:00 "Challenges and Solutions for RFIC Realization" Sugaya Hidehiko (Cadence Japan)
15:00 - 15:10 Break (10 minutes)
15:10 - 15:50 "Methodology for substrate coupling analysis with high frequency accuracy" Sotiris Bantas (Helic, Inc.)
15:50 - 16:30 "Behavioral technology of RF transceiver circuit" Takahiro Kikuchi (Agilent Technologies)
16:30 Closing
17:30 - social gathering
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