[open positions] TU Warsaw

 

We [TU Warsaw] offer two #openpositions for PhDs who perform research in the broad field of technology, characterization, and modeling of #semiconductor structures and devices. The first position is for a #postdoctoralfellowship, while the second one is for an #assistantprofessor. The specifics of both offers are attached to this post. The candidates will be employed in the Institute of Microelectronics and Optoelectronics, Faculty of Electronics and Information Technologies of Warsaw University of Technology. Both positions will start in December 2023/January 2024.

Links to offers with a list of documents to apply:

• (PostDoc): https://lnkd.in/di7dwV5p
• (Assistant Professor): https://lnkd.in/dk5d6Dfa

Interested applicants should contact Robert Mroczyński with a complete professional CV (including educational background, experience, and a list of publications), an electronic version (pdf) of the Ph.D. thesis, and the contact information to at least two experts who would provide letters of recommendation.

[Short Course] MACHINE LEARNING FOR ELECTRON DEVICES

Short Course on

MACHINE LEARNING FOR ELECTRON DEVICES

3-6 October 2023, IIT Roorkee

Four day residential program to learn and explore the role of Machine Learning in shaping the future of the semiconductor EDA.

KEY HIGHLIGHTS

• Lectures from basic machine learning to advanced ideas
• Hands-on tutorials for developing your own Machine learning models
• Excellent networking opportunity
• Interaction with experts from industry and academia
• UG Fellowships up to ₹ 10000/month for selected participants
• Funding opportunity upto INR 40Lacs as start-up seed grant for selected ideas

EVENT SCHEDULE <http://ece.iitr.ac.in/diraclab/mled23/>

[paper] GaN-on-Si HEMT

Rijo Baby^a, Manish Mandal^b, Shamibrota K. Roy^b, Abheek Bardhan^a, Rangarajan Muralidharan^a, Kaushik Basu^b, Srinivasan Raghavan^a, Digbijoy N. Nath^a

8A, 200V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing

Microelectronic Engineering, Volume 282, 2023, 112085,

DOI: 10.1016/j.mee.2023.112085.

a Center for Nanoscience and Engineering (CeNSE), (IISc Bangalore (IN)
b Department of Electrical Engineering, IISc Bangalore (IN)

Abstract: In this paper, we provide a comprehensive study on all aspects of development of normally-off multi-finger III-nitride HEMT on Silicon in cascode configuration. AlGaN/GaN HEMT epi-stack with in situ SiN cap was grown on 2" Silicon (111) using MOCVD, utilizing a 2-step AlN nucleation, step-graded AlGaN transition layer and C-doped GaN buffer. Depletion-mode HEMTs in winding gate geometry with a gate width of 30mm were fabricated with thick electroplated metal contacts and an optimized bilayer SiN passivation. Devices were diced and packaged in TO254 with conducting epoxy and Au-coated ceramic substrate. These packaged D-mode HEMTs exhibited a threshold voltage (Vth) of −12V, maximum ON current of 10A and a 3-terminal hard breakdown in excess of 400V. Bare dies of D-mode HEMTs were then integrated with commercially procured silicon MOSFET in a TO254 package in cascode configuration to achieve Vth>2V, ON current of 8Aand breakdown >200V. The normally-off cascaded GaN HEMTs were subjected to various gate and drain stress measurements and were found to exhibit a Vth shift of 10 mV after 1000 s of positive gate (+5V) stress. The input and output capacitances of the cascode devices were measured to be 1 nF and 0.8 nF, respectively. The 3rd quadrant operation was checked at 8 A on-state current level to reveal a lower voltage drop of 0. V. Finally, cascode HEMTs were subjected to double pulsed testing (DPT) using a half-bridge evaluation board. On and off rise times of 52 ns and 59 ns were obtained along with energy loss of 25 μJ and 20 μJ, respectively, for devices switched at 8A,100V.

FIG: 8A, 200 V normally-off cascode GaN-on-Si HEMT

Acknowledgement: This research was supported by ISRO/SCL. We also acknowledge funding support from MHRD through the NIEIN project, from MeitY and DST Nano Mission through NNetRA. We thank the Micro and Nano Characterization Facility (MNCF) staff and facility technologists of the National Nano Fabrication Facility (NNFC). We thank Anirudh Venugopalarao, Parimalazhagan Serralan, Mr. Veera Pandi N, Dr. M.M Nayak, Mr. Malingu G and Bharath Kumar M for their support.

[paper] Knowing Your Heart Condition Anytime

Lei Wang, Xingwei Wang, Dalin Zhang, Xiaolei Ma, Yong Zhang, Haipeng Dai, 

Chenren Xu, Zhijun Li, Tao Gu

Knowing Your Heart Condition Anytime:

User-Independent ECG Measurement Using Commercial Mobile Phones

Proceedings of the ACM on Interactive, Mobile, Wearable and Ubiquitous Technologies

Vol. 7, Issue 3, Article No.: 131, pp 1–28

DOI: 10.1145/3610871

Abstract: Electrocardiogram (ECG) monitoring has been widely explored in detecting and diagnosing cardiovascular diseases due to its accuracy, simplicity, and sensitivity. However, medical- or commercial-grade ECG monitoring devices can be costly for people who want to monitor their ECG on a daily basis. These devices typically require several electrodes to be attached to the human body which is inconvenient for continuous monitoring. To enable low-cost measurement of ECG signals with off-the-shelf devices on a daily basis, in this paper, we propose a novel ECG sensing system that uses acceleration data collected from a smartphone. Our system offers several advantages over previous systems, including low cost, ease of use, location and user independence, and high accuracy. We design a two-tiered denoising process, comprising SWT and Soft-Thresholding, to effectively eliminate interference caused by respiration, body, and hand movements. Finally, we develop a multi-level deep learning recovery model to achieve efficient, real-time and user-independent ECG measurement on commercial mobile phones. We conduct extensive experiments with 30 participants (with nearly 36,000 heartbeat samples) under a user-independent scenario. The average errors of the PR interval, QRS interval, QT interval, and RR interval are 12.02 ms, 16.9 ms, 16.64 ms, and 1.84 ms, respectively. As a case study, we also demonstrate the strong capability of our system in signal recovery for patients with common heart diseases, including tachycardia, bradycardia, arrhythmia, unstable angina, and myocardial infarction.

Fig:  Seismocardiogram (SCG) ECG recovery system:

(a) Typical application scenario with SCG/ECG system 

(b) Interface of the mobile APP.

Acknowledgments: This research is supported by National Natural Science Foundation of China (Grant No. 62102006). This work is also in part supported by The Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 1020231697)

[C4P] LASCAS 2024

 

LASCAS 2024

An IEEE CASS Flagship Conference

15th IEEE LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS

February 27 - March 01, 2024

ieee-lascas.org

PUNTA DEL ESTE - URUGUAY

Since its first edition in 2010, LASCAS provides a high-quality exchange and networking forum for researchers, professionals, and students, gathering an international audience with experts from all over the world. This event is a space where the CAS community can present new concepts and innovative approaches, learn about new trends and solutions, and receive feedback from specialists in diverse fields.

The 15th edition will take place in Punta del Este, Uruguay. With its lush landscapes, pristine beaches, and sophisticated amenities, it has established itself as a premier tourist destination in South America. It offers an unparalleled experience, where visitors can immerse themselves in a rich blend of natural beauty and modern luxury. The city is easily accessible by air, with regular flights from major cities in South America, and just 90 minute from Montevideo and its international airport. Punta del Este is ready to receive you. The symposium will cover technical novelties and tutorial overviews on circuits and systems topics including but not limited to:

● Analog and Digital Signal Processing

● Biomedical Circuits and Systems

● Intelligent Sensor Systems and Internet of Things

● Artificial Intelligence and Smart Systems

● Nanoelectronics and Gigascale Systems

● Electronic Design Automation

● Circuits and Systems for Communications

● RF Circuits and Systems

● Smart Systems and Smart Manufacturing

● Power Systems and Power Electronic Circuits

● Multimedia Systems and Applications

● Life Science Systems and Applications

● Electronic Testing

● Fault Tolerant Circuits

● Nonlinear Circuits and Systems

● Cognitive Computing and Deep Learning

● Computing and Big Data Applications

Accepted papers will be submitted for inclusion into IEEE Xplore subject to meeting IEEE Xplore’s scope and quality requirements. Best papers will be invited to a special edition of the IEEE Transactions on Circuits and Systems I (TCAS-I) and IEEE Transactions on Circuits and Systems II (TCAS-II). A social program will be offered, including special events and tours to selected attractions for the attendees and their guests.

General Chairs:

Dr. Matías Miguez – UCU, Uruguay. 

Dr. Pablo Pérez-Nicoli – Udelar, Uruguay. 

Program Chairs:

Dr. Maysam Ghovanloo –Silicon Creations, USA

Dr. José Lipovetzky – IB-CNA, Argentina