IEDM 2016 Session 7: Modeling and Simulation Advanced Numerical and Compact Models

IEDM 2016 Session 7

Modeling and Simulation Advanced Numerical and Compact Models

Monday, December 5, 1:30 p.m. Continental Ballroom 7-9 

Co-Chairs: Denis Rideau, STMicroelectronics 

Xing Zhou, Nanyang Technological University

1:35 PM 

7.1 A Novel Synthesis of Rent's Rule and Effective-Media Theory Predicts FEOL and BEOL Reliability of Self-Heated ICs, W. Ahn, H. Jiang, S.H. Shin and M. Alam, Purdue University

2:00 PM 

7.2 New Approach for Understanding "Random Device Physics" from Channel Percolation Perspectives: Statistical Simulations, Key Factors and Experimental Results, Z. Zhang, Z. Zhang, R. Wang, X. Jiang, S. Guo, Y. Wang, X. Wang*, B. Cheng*, A. Asenov* and R. Huang, Peking University, *Synopsys

2:25 PM 

7.3 Oxide-Based Analog Synapse: Physical Modeling, Experimental Characterization, and Optimization, B. Gao, H. Wu, J. Kang*, H, Yu**, H. Qian, Tsinghua University, *Peking University, **Southern University of Science and Technology

2:50 PM 

7.4 Extending the Bounds of Performance in E-mode p-channel GaN MOSHFETs, A. Kumar and M. De Souza, The University of Sheffield

3:15 PM 

7.5 NSP: Physical Compact Model for Stacked-planar and Vertical Gate-All-Around MOSFETs, O. Rozeau, S. Martinie, T. Poiroux, F. Triozon, S. Barraud, J. Lacord, Y.-M. Niquet*, C. Tabone, R. Coquand, E. Augendre, M. Vinet, O. Faynot, and J.-C. Barb, CEA-Leti, *CEA-INAC

3:40 PM 

7.6 A Physics-Based Compact Model for Material- and Operation-Oriented Switching Behaviors of CBRAM, Y. Zhao, J. Hu, P. Huang, F. Yuan*, Y. Chai*, X. Liu and J. Kang, Peking University, *The Hong Kong Polytechnic University

4:05 PM 

7.7 Multi-Domain Compact Modeling for GeSbTe-based Memory and Selector Devices and Simulation for Large-scale 3-D Cross-Point Memory Arrays, N. Xu, J. Wang, Y. Deng, Y. Lu, B. Fu, W. Choi, U. Monga*, J. Jeon*, J. Kim*, K.-H. Lee* and E. S. Jung*, Samsung Semiconductor Inc., *Samsung Electronics

[read more...]

Compound Semiconductor Technical Committee Meeting

SEMI® International Standards Program

Compound Semiconductor Technical Committee Meeting

Fraunhofer IISB, Schottkystrasse 10, D-91058 Erlangen, Germany

Thu 13th October 2016 14:00 to 16:30

Co-chairs:
• Dr. Arnd-Dietrich Weber, SiCrystal
• N.N. 

Agenda: European Compound Semiconductor Committee Meeting

Task Force meetings – tbd

14:00 Welcome and Self-Introductions all

14:05 SEMI Standards Overview and Legal Reminders SEMI Staff

14:10 Review of the minutes and action items from the previous meeting SEMI Staff

14:15 Task Force Reports (~5 minutes each)

SiC-Task Force A. Weber

Status M55 5-year review (doc 4689)

Status M81 5-year-review (doc 6015)

Contactless Capacitive Resistivity Task Force W. Jantz

14:30 Discussion and approval of doc 4689 (M55 review) for ballot A. Weber

15:00 5-Year-Review of published documents

5-year-review of M54 (Guide for semi-insulating GaAs parameters): discuss and

approve TFOF and SNARF U. Kretzer

dentification and discussion of action items all

15:30 Compound Materials Liaison Reports

North America

Japan SEMI Staff

15:45 Any Other Business / Questions A. Weber

16:00 Next Meetings

16:15 Adjourn 

Lectures on Electromagnetism https://t.co/nxi9p90Cte #papers

Lectures on Electromagnetism https://t.co/nxi9p90Cte #papers

— Wladek Grabinski (@wladek60) October 12, 2016

from Twitter https://twitter.com/wladek60

October 12, 2016 at 10:55AM
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[paper] Well-Posed Models of Memristive Devices

Well-Posed Models of Memristive Devices

Tianshi Wang, Jaijeet Roychowdhury

(Submitted on 15 May 2016)

Existing compact models for memristive devices (including RRAM and CBRAM) all suffer from issues related to mathematical ill-posedness and/or improper implementation. This limits their value for simulation and design and in some cases, results in qualitatively unphysical predictions. We identify the causes of ill-posedness in these models. We then show how memristive devices in general can be modelled using only continuous/smooth primitives in such a way that they always respect physical bounds for filament length and also feature well-defined and correct DC behaviour. We show how to express these models properly in languages like Verilog-A and ModSpec (MATLAB). We apply these methods to correct previously published RRAM and memristor models and make them well posed. The result is a collection of memristor models that may be dubbed "simulation-ready", i.e., that feature the right physical characteristics and are suitable for robust and consistent simulation in DC, AC, transient, etc., analyses. We provide implementations of these models in both ModSpec/MATLAB and Verilog-A.

Subjects: Emerging Technologies (cs.ET); Computational Engineering, Finance, and Science (cs.CE)
Cite as: arXiv:1605.04897 [cs.ET]
(or arXiv:1605.04897v1 [cs.ET] for this version)