Nov 20, 2020

[Launch Event] EMPHASIS University of Cyprus

LAUNCH EVENT: November 25, 2020 10:00-13:30EET

EMPHASIS is a multidisciplinary research centre involving departments from the School of Engineering and School of Pure & Applied Sciences from the University of Cyprus. Join us online to learn more about our labs' research in the key enabling technologies behind the digital revolution: electronics, microwaves & antennas, photonics and sensors.

SCHEDULE: (Eastern European Time)
10:00–10:10: Introduction 
Prof.Tasos Christofides, Rector of the University of Cyprus
10:10–10:20: Introductory Remarks
Dr.Nikolas Mastroyiannopoulos, Chief Scientist for Research and Innovation
10:20–10:50: EMPHASIS Research Centre: Vision & Goals,
Prof.Stavros Iezekiel, Acting Director of EMPHASIS
BREAK
11:00–11:30: EMPHASIS Research Laboratory Presentations
11:30–13.30: Presentation of Selected Research Projects in Electronics, Microwaves & Antennas, Photonics and Sensors
SESSION1: 11:30-12:30
• Medical Electronics,
Prof.Julius Georgiou
• Sensors for Precision Agriculture, 
Dr.Marios Sophocleous
• Resveratrolloaded Polymeric Miceles for Theranostic Targeting of Breast Cancer Cels, 
Dr.Yiota Grigoriou
• White Light Emitting Structures Based on II-Nitrides and Lead Halide Perovskite Nanocrystals,
Dr.Modestos Athanasiou
• Multi-bacteria,Multi-antibiotic Testing Using Surface Enhanced Raman Spectroscopy
(SERS)forUrinary Tract Infection (UTI)Diagnosis, 
Dr.Katerina Hadjigeorgiou
BREAK
SESSION2: 12:30-13:30
• Electric-Field Measurements of Microwave Circuits,
Dr.Haris Votsi
• Integrated Circuits for RF Metasurfaces, 
Loukas Petrou/Kypros Kossifos
• Influence of Carriers in Spin Pumping in Organic Semiconductors, 
Constantinos Nicolaides
• Microwave Photonics for Space,
Georgios Charalambous
• Wireless Power Transfer (WPT) and Far-Field RF Energy Harvesting,
Dr.Abdul Quddious

FOR MORE INFORMATION: www.emphasis.ucy.ac.cy/launch-event


[paper] Characterization of ultrathin FDSOI devices using subthreshold slope method

Teimuraz Mchedlidze1, and Elke Erben2
Characterization of ultrathin FDSOI devices using subthreshold slope method
Phys. Status Solidi A. Accepted Manuscript
DOI: 10.1002/pssa.202000625

1 TU Dresden, Germany
2 Globalfoundries, Dresden, Germany

Abstract: The subthreshold current-voltage (subthreshold slope) characteristic of fully depleted silicon-on-insulator high-k dielectric-metal gate field-effect transistor is applied for evaluation of the interface traps located at both, the front and back channels. The proposed characterization method allows an estimation of averaged trap densities separately for the front and the back interfaces of the channel. Performing subthreshold slope measurements at several temperatures allow the extraction of the energy distributions of the interface trap densities for both interfaces and obtaining essential characteristics of the stack.

Fig: Results of ID(VGF,k,T) measurements for EG sample. At each temperature 
(200, 300 and 400K) a group of curves contains data for eight k values
(k = 0 to 3 with step 0.5 and kOC; solid curve). 

Acknowledgements: The authors would like to acknowledge funding of the study in the frames of the IPCEI WIN- FDSOI project from Global Foundries. We want to thank Jörg Weber (TU Dresden), Luca Pirro (Global Foundries) and Rolf Öttking (AQ Computare, Chemnitz) for thoughtful discussions and suggestions.





Nov 19, 2020

#Nanoscale #Schottky #diodes fabricated via adhesion lithography https://t.co/dkeSdlinNP #semi https://t.co/u353DjjCVP



from Twitter https://twitter.com/wladek60

November 19, 2020 at 04:38PM
via IFTTT

#India Has $100 Billion Opportunity Through Domestic #Manufacturing Of Tablets, Laptops [ICEA] https://t.co/YIekOOiFME #semi https://t.co/S0rb3I1jXA



from Twitter https://twitter.com/wladek60

November 19, 2020 at 04:37PM
via IFTTT

[paper] Compact Model for Power MOSFET

Abdelghafour Galadi
PSPICE compact model for power MOSFET based on manufacturer datasheet
DOI:10.1088/1757-899X/948/1/012007

National School of Applied Sciences of Safi, Cadi Ayyad University, Marrakech (MA)

Abstract: In this paper, large signal model for power MOSFET devices is presented. The proposed model includes quasi-saturation effect and describes accurately the electrical behavior of the power MOSFET devices. The large signal model elements will be provided based on the device structure. Furthermore, the model parameters are extracted from measurements considering the voltages depending effect of the nonlinear gate-source, gate-drain and drain-source interelectrode capacitances. Excellent agreements will be shown between the simulated and the datasheet data. Finally, a description of the model will be provided along with the parameter extraction procedure.
Fig: a) Conventional power MOSFET structure with b) its subcircuit elements.