Master Thesis by Alba Gallego Velázquez
Defended: July 1, 2025
Technical University of Crete, Chania
Tutor: Prof. Matthias Bucher
Abstract: The present thesis sets out the development and implementation of a compact model of a MOSFET, based on the theoretical EKV model, and implemented using the Verilog-A language. The utilization of simulation and compilation environments, such as the open server OpenVAF and Ngspice, is instrumental in facilitating the effective execution of the work. The construction of a model that can perform the function of an nMOS or a pMOS nanometric operating in a saturated state is facilitated by these. In this model, physical dependencies and second-order effects are incorporated, ensuring the attainment of continuous expressions for all inversion regions. The model's behavior is validated against experimental data by means of simulation. This results in an accurate, compact and versatile model, which is suitable for supporting integrated analog circuits designs with a wide range of values for the inversion coefficient.
Fig: Normalized (𝐺𝑚𝑠 ·𝑈𝑡)/ID of the nMOS vs. the inversion coefficient (IC)
