We want to get one scholarship for a Ph D student position in the Department of Electronic Engineering in the Department of Electronic Engineering in the Universitat Rovira i Virgili (URV), in Tarragona , Spain. The subject of the Ph D would be o the development of new techniques of characterization and modeling of nanoscale semiconductor devices, in particular two-dimensional semiconductor devices, (which are one of the most promising device structures for downscaling to 1nm), in particular transistors or memristors. It will be related to funding research projects in which the hosting group participates.
The duration of the grant will be 3 years.
The candidate should have a Master degree in Electrical Engineering, Electronic Engineering, Telecommunication Engineering or Physics, obtained between January 1 2020 and October 2022. A good background in Semiconductor Physics, Semiconductor Devices, or Integrated Circuit Design will be highly appreciated.
Applicants must send to my e-mail address (benjamin.iniguez@urv.cat), and by November 9 2022, a CV together witha copy of the academic certificates indicating the grades obtained for all subjects during their studies (both Bachelor Degree and Master Degree).
Tarragona is a medium city (100000 inhabitants) with a pleasant Mediterranean climate and many recreation opportunities (nice beaches, theme parks, nature preserves, mountain hiking, touristic resorts and facilities). It is located 100 km Southwest of Barcelona, and it is very well connected by train, bus, highways and even low cost flights from its own airport.
My research group in the Department of Electronic Engineering, Universitat Rovira i Virgili (URV) is one of the strongest groups in compact modeling in Europe. We have led or are leading several national and European projects targeting semiconductor device characterization, physics and modeling.
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