#paper: N. Chowdhury et al., "First Demonstration of a Self-Aligned #GaN p-FET," 2019 IEEE #IEDM, San Francisco, CA, USA, 2019, pp. 4.6.1-4.6.4. https://t.co/7u64T4nDe2 pic.twitter.com/gOSilpZbW9
— Wladek Grabinski (@wladek60) February 21, 2020
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February 21, 2020 at 02:40PM
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