Analytical #modeling of channel potential and threshold voltage of triple material gate AlGaN/GaN HEMT including trapped and polarization‐induced charges https://t.co/5pjOzA7eik https://t.co/7ibTrRWoH7

Analytical #modeling of channel potential and threshold voltage of triple material gate AlGaN/GaN HEMT including trapped and polarization‐induced charges https://t.co/5pjOzA7eik pic.twitter.com/7ibTrRWoH7

— Wladek Grabinski (@wladek60) July 31, 2018

from Twitter https://twitter.com/wladek60

July 31, 2018 at 09:00AM
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