A Physics-Based #Compact #Model of #SiC Junction Barrier Schottky Diode for Circuit Simulation - Published in: IEEE Transactions on Electron Devices ( Volume: 65, Issue: 8, Aug. 2018 ) https://t.co/68fIGLy7M8

A Physics-Based #Compact #Model of #SiC Junction Barrier Schottky Diode for Circuit Simulation - Published in: IEEE Transactions on Electron Devices ( Volume: 65, Issue: 8, Aug. 2018 ) https://t.co/68fIGLy7M8

— Wladek Grabinski (@wladek60) July 24, 2018

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July 24, 2018 at 10:12AM
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