Sedemos News

Mar 13, 2023

#semiconductors #India #US #innovation

#semiconductors #IndiaUS #innovation #supplychain #semi https://t.co/0FiCjCUg8X
— Wladek Grabinski (@wladek60) Mar 13, 2023

from Twitter https://twitter.com/wladek60

March 13, 2023 at 09:56AM
via IFTTT

Mar 12, 2023

AACD 2023 --- Final Program

We, AACD Organizers, are proud to announce the final program the 31^st Advances in Analog Circuit Design Workshop (AACD23) held at Carinthia University of Applied Sciences (FH Karnten) in Villach, Austria on April, 12^th-14^th, 2023.

Early-bird discounted registration is available till March 19^th 2023.

Workshop Registration includes participation to the sessions, pdf documentation, lunches and coffee breaks for the three days, Welcome Cocktail (on April, 12^th) and Gala Dinner (on April, 13^th).

For any further information:

Visit http://www.mbtechnoservices.com/aacd23
Contact AACD23 General Chairman, prof. Andrea Baschirotto (andrea.baschirotto@unimib.it)

We look forward to meeting you in Villach!!!!

Andrea Baschirotto
AACD23 General Chairman

Mar 10, 2023

Hello world in #electornics https://t.co/xXWbkqxlen #semi [https://t.co/CYopGZA4rp] Congratulations, you are now an electrical engineer! 😀 https://t.co/eUc1iStenR

Hello world in #electornics https://t.co/xXWbkqxlen #semi [https://t.co/CYopGZA4rp] Congratulations, you are now an electrical engineer! 😀 https://t.co/eUc1iStenR
— Wladek Grabinski (@wladek60) Mar 10, 2023

from Twitter https://twitter.com/wladek60

March 10, 2023 at 09:11PM
via IFTTT

Mar 8, 2023

[paper] Cryogenic Characteristics of InGaAs MOSFET

L. Södergren, P. Olausson and E. Lind

Cryogenic Characteristics of InGaAs MOSFET

in IEEE TED, vol. 70, no. 3, pp. 1226-1230, March 2023,

DOI: 10.1109/TED.2023.3238382

Abstract: We present an investigation of the temperature dependence of the current characteristic of a long-channel InGaAs quantum well MOSFET. A model is developed, which includes the effects of band tail states, electron concentration-dependent mobility, and interface trap density to accurately explain the measured data over all modes of operation. The increased effect of remote impurity scattering is associated with mobility degradation in the subthreshold region. The device has been characterized down to 13 K, with a minimum inverse subthreshold slope of 8 mV/dec and a maximum ON-state mobility of 6700 cm2/Vs and with values of 75 mV/dec and 3000 cm2/Vs at room temperature.

FIG: Measured transfer characteristics at 13, 100, and 300 K together with the fit model with

(a) VDS=50 mV and (b) VDS=500 mV.

Mar 6, 2023

[open position] IHP Research Associate for Open PDK Development

Research Associate for Open PDK Development (m/f/d)

Developer for Open Source Process Design Kits

for SiGe-BiCMOS Technology

IHP is an institute of the Leibniz Association and conducts research and development of silicon-based systems and ultra-high-frequency circuits and technologies, including new materials. It develops innovative solutions for application areas such as wireless and broadband communication, security, medical technology, industry 4.0, automotive industry, and aerospace. IHP employs approximately 350 people. It operates a pilot line for technological developments and the preparation of high-speed circuits with 0.13/0.25 µm-SiGe-BiCMOS technologies, located in a 1500 m² cleanroom that meets the highest industrial nanotechnology requirements.

The position:

As a member of the group Research & Prototyping Service, you will develop Process Design Kit for IHP’s BiCMOS technologies and new future technology modules with special focus on open source PDK development. Your detailed tasks will include programming of pCells and their integration into our verification process. Devices descriptions, user guides and test cases are important aspects of your work, too. Finally, managing our PDK repositories on Github with external contributions and adaption of existing tools like OpenRAM is part of the work. Implementation of new devices and investigations of new design tools and flows will give this position room for interesting development opportunities.

Your profile:

You hold a Master's degree in computer science with background in semiconductors, physics or electrical engineering. Knowledge in semiconductor devices and programming are of advantage. Your specialized knowledge preferably covers ASIC design environment like Cadence Virtuoso, Mentor/Siemens Tanner or KeySight ADS, OpenROAD/OpenLane, Linux and scripting languages (e.g. Python, Perl or TCL). You are well organized and always keep the overview even with many parallel projects. Thanks to your skillful communication, you are a binding and reliable contact person for our partners. You are also a strong team player, and you confidently handle the German and English language. You are also a strong team player. We are looking for a team member, who is able to structure his or her own work and to bring a well-organized and systematic way of working into the cooperation with creative minds. You are an ideal match for this position, when you have experimental, analytical and problem-solving skills, very strong communicative skills and the ability to quickly learn how to operate the latest technical equipment including various software. It is necessary that you confidently handle the English language. Knowledge of the German language is welcome. The consolidating of German language skills is expected and highly encouraged, for example in in-house language courses and intensive courses.

Your application:
Have we sparked your interest? Then we look forward to receiving your application via our online application form. For further information regarding the position, please contact Dr. René Scholz