#Samsung to invest in South Korea #mega #semi chip-making #plan https://t.co/ryMYKRclVi https://t.co/VaLanWwUST
— Wladek Grabinski (@wladek60) Mar 15, 2023
from Twitter https://twitter.com/wladek60
March 15, 2023 at 08:28PM
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Mar 15, 2023
#Samsung to invest in South Korea
from Twitter https://twitter.com/wladek60
March 15, 2023 at 08:28PM
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First Indian #semi #fab will be declared in a few weeks
[https://t.co/qtxGLqhZm8] First #semi #fab will be declared in a few weeks: IT Minister Ashwini Vaishnaw https://t.co/x5Gcp9BMVR https://t.co/eHZLSL12Y0
— Wladek Grabinski (@wladek60) Mar 15, 2023
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March 15, 2023 at 04:42PM
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[paper] Noise Characterization of MOSFETs for Cryogenic Electronics
Variable-Temperature Broadband Noise Characterization of MOSFETs
for Cryogenic Electronics: From Room Temperature down to 3K
Kenji Ohmori1 and Shuhei Amakawa2
TechRxiv. DETM 2022 Preprint
DOI: 10.36227/techrxiv.21762917.v1
1 Device Lab Inc., Tsukuba, Ibaraki, Japan,
2 Hiroshima University, Higashihiroshima, Hiroshima, Japan
Abstract: A broadband noise measurement system is newly developed and demonstrated at temperatures between 3K and 300K. Using the system, wideband noise spectroscopy (WBNS) from 20kHz to 500MHz is carried out for the first time, revealing that shot noise is the dominant white noise down to 3K. The paper also suggests, by means of WBNS, the possibility of extracting the baseline noise characteristics, which do not include the noise component that varies a great deal from device to device.
FIG: a.) IdVg Curves at T = 2.9K ... 300K and b.) 1/f Noise at T=5K
Acknowledgement:
This work was partially supported by NEDO-SBIR.
[paper] highly segmented hybrid pixel detectors
R. Ballabrigaa, J.A. Alozya, F.N. Bandia, G. Blajb, M. Campbella, P. Christodouloua c d, V. Cocoa, A. Dordaa e, S. Emiliania h, K. Heijhoff f, E. Heijne a c, T. Hofmanna, J. Kaplona, A. Koukabh,
I. Kremastiotisa, X. Lloparta, M. Noya, A. Paternoa, M. Pillera g, J.M. Sallesseh, V. Sriskarana,
L. Tlustosa c, M. van Beuzekomf
I. Kremastiotisa, X. Lloparta, M. Noya, A. Paternoa, M. Pillera g, J.M. Sallesseh, V. Sriskarana,
L. Tlustosa c, M. van Beuzekomf
The Timepix4 analog front-end design: Lessons learnt on fundamental limits to noise and time resolution in highly segmented hybrid pixel detectors
Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume 1045, 1 January 2023, 167489
DOI: 10.1016/j.nima.2022.167489
a CERN, Experimental Physics Department, Meyrin, 1211, Switzerland
b SLAC National Accelerator Laboratory, Menlo Park, 94025, CA, United States
c IEAP, Czech Technical University in Prague, Prague, 11000, Czech Republic
d Department of Biomedical technology, Faculty of Biomedical Engineering, Czech Technical University in Prague, nam. Sitna 3105, Kladno, 272 01, Czech Republic
e KIT - Karlsruhe Institute of Technology, Institute for Data Processing and Electronics (IPE), Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, 76344, Germany
f Nikhef, Science Park 105, Amsterdam, 1098, Netherlands
g Institute of Electronics, Graz University of Technology, Graz, 8010, Austria
h Electron Device Modeling and Technology Laboratory (EDLAB), EPFL, Switzerland
Abstract: This manuscript describes the optimization of the front-end readout electronics for high granularity hybrid pixel detectors. The theoretical study aims at minimizing the noise and jitter. The model presented here is validated with both circuit post layout simulations and measurements on the Timepix4 Application Specific Integrated Circuit (ASIC). The analog front-end circuit and the procedure to optimize the dimensions of the main transistors are described with detail. The Timepix4 is the most recent ASIC designed in the framework of the Medipix4 Collaboration. It was manufactured in 65 nm CMOS process, and consists of a four side buttable matrix of 448X512 pixels with 55µm pitch. The analog front-end has a gain of 36 mV/ke- when configured in High Gain Mode, and 20 mV/ke- when configured in Low Gain Mode. The Equivalent Noise Charge (ENC) is ~68e-rms and ~80e-rms in High Gain Mode and in Low Gain Mode respectively. In event driven mode, the incoming hits can be time stamped within a 200ps time bin and the chip can deal with a maximum flux of 3.6MHz mm-2s-1. In photon counting mode, the chip can deal with up to 5GHz mm-2s-1. The routine designed to optimize the Timepix4 front-end is then used to analyze the performance limits in terms of jitter and noise for Charge Sensitive Amplifiers in pixel detectors.
Fig: Transconductance that can be obtained for the input transistor as an EKV function of the Inversion Coefficient (IC). The asymptotes for the velocity without and with velocity saturation are shown.
Acknowledgments: The authors would like to acknowledge the Medipix Collaborations for their continuous support in the design of hybrid pixel detector readout chips.
Mar 14, 2023
IEEE CASS IIT Roorkee offline Workshop on Robust and Reliable VLSI Circuits Design
IEEE CASS SBC IIT Roorkee in collaboration with IEEE UP Section and some industry partners is organizing a workshop entitled "Robust and Reliable VLSI Circuits". This is a three-day residential workshop to learn the aspects of reliable and robust design in VLSI circuits from the leading academic/industrial experts.
The benefits of this workshop to the participants will be multifold:
Participants will get an opportunity to interact with leading researchers both from academic and the industry.
Participants will get hand-on experience on various EDA tools.
The participants will get the opportunity to present their recent domain work to the experts.
For Registration click here
To know more visit the R2VC website at
Date: 7-9 April, 2023
Venue: Indian Institute of Technology(IIT) Roorkee,
Uttarakhand
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9719749045
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9810938752
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