[paper] Compact Modelling of Si Nanowire/Nanosheet MOSFETs

A. Cerdeira¹, M. Estrada¹, and M. A. Pavanello²

On the compact modelling of Si nanowire and Si nanosheet MOSFETs

Semiconductor Science and Technology, vol. 37, no. 2, p. 025014, Jan. 2022.

DOI: 10.1088/1361-6641/ac45c0

   

1 Centro de lnvestigacién y de Estudios Avanzados del IPN, Mexico City, Mexico
2 Centro Universitario PEI, Sao Bernardo do Cainpo, Sao Paulo, Brazil

Abstract: In this paper, three-dimensional technology computer aided design simulations are used to show that the electron concentration, current density, and electric field distribution from the interface at the lateral channels and from the top channel to the centre of the silicon wire, in nanowire and nanosheet structures, are practically same. This characteristic makes it possible to consider that the total channel width for these structures is equal to the perimeter of the transistor sheet, allowing to extend of the application of the symmetric doped double-gate model (SDDGM) model to nanowires and nanosheets metal-oxide-semiconductor field effect transistors, with no need to include new parameters. The model SDDGM is validated for this application using several measured and simulated structures of nanowires and nanosheets transistors, with different aspect ratios of fin width and fin height, showing very good agreement between measured or simulated characteristics and modelled. SDDGM is encoded in Verilog-A language and implemented in SPICE circuit simulator.

Fig: a.) Normalized measured and modelled transfer characteristics of stacked transistor in the linear region at VDS=0.025V and in saturation region at VDS=0.75V; b.) Output characteristic and conductance at VGS=1V.

Acknowledgments: The authors are grateful to CEA—Leti for providing the exper- imental samples used in this paper. This work was supported by the CONACYT project 236887, CNPq, Sao Paulo Research Foundation (FAPESP) Grants 2015/ 1049 1-7 and 2019/ 15500- 5, and the IBM/STMicroelectronics/Leti Joint Development Alliance.

 

A new development method for flexible electronics

A new development method for flexible electronics https://t.co/TnLxEzxGrt #semi https://t.co/TzIHEsPxxd

— Wladek Grabinski (@wladek60) Jan 7, 2022

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from Twitter https://twitter.com/wladek60

January 07, 2022 at 08:20PM
via IFTTT

[paper] RTN of a 28-nm Cryogenic MOSFET

HeeBong Yang, Marcel Robitaille, Xuesong Chen, Hazem Elgabra, Lan Wei, Na Young Kim

Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime

IEEE Electron Device Letters, vol. 43, no. 1, pp. 5-8, Jan. 2022

DOI: 10.1109/LED.2021.3132964.

  

* Institute for Quantum Computing, Waterloo Institute for Nanotechnology (CA)

Abstract: We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel. Minimum RTN is observed at the CB hump where the high-current RTN level dramatically switches to the low-current level. The gate-voltage dependence of the RTN amplitude and power spectral density match well with the transconductance from the DC transfer curve in the CB hump region. Our work unequivocally captures these QD transport signatures in both current and noise, revealing quantum confinement effects in commercial short-channel PMOS even at 14 K, over 100 times higher than the typical dilution refrigerator temperatures of QD experiments (< 100 mK). We envision that our reported RTN characteristics rooted from the QD and a defect trap would be more prominent for smaller technology nodes, where the quantum effect should be carefully examined in cryogenic CMOS circuit designs.

Fig: (a) The trapping behaviors are illustrated with empty trap (solid line) and occupied trap (dashed line) across the hump area of the |ID| -|VGS| sweep. (b) The current power spectral density (PSD) of the discretized data with the 1/f2 PSD guideline in red.

Acknowledgment: J. Watt and C. Chen in Intel for samples, A. Malcolm for early work, and J.Baugh for helpful discussions are appreciated.

Future Horizons' Annual Semiconductor Industry Forecast Webinar

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Will the current shortages continue through 2022? Find out the answer to this and other key questions at IFS2022, Future Horizons' Annual Semiconductor Industry Forecast Webinar:
https://www.futurehorizons.com/page/135/

When?  Tue 18 Jan 2022 - 3pm GMT (7am PST / 10am EST / 4pm CET / 12pm JST)

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• Valuable insight about the industry's future growth
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Why Future Horizons?
We have been in the business of forecasting and analysing the semiconductor market for over 55 years and have been a trusted advisor to governments, investors and most of the top global semiconductor firms. Time and time again we have delivered sound advice and saved our clients time and money with our forensic and accurate analysis of the industry.

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[paper] Ultrafast imaging of THz electric waveforms using quantum dots

Moritz B. Heindl, Nicholas Kirkwood, Tobias Lauster, Julia A. Lang, Markus Retsch, Paul Mulvaney and Georg Herink;

Ultrafast imaging of terahertz electric waveforms using quantum dots;

Light: Science & Applications; Vol. 11, No. 5 (2022)

DOI: 10.1038/s41377-021-00693-5

Abstract: Microscopic electric fields govern the majority of elementary excitations in condensed matter and drive electronics at frequencies approaching the Terahertz (THz) regime. However, only few imaging schemes are able to resolve sub-wavelength fields in the THz range, such as scanning-probe techniques, electro-optic sampling, and ultrafast electron microscopy. Still, intrinsic constraints on sample geometry, acquisition speed and field strength limit their applicability. Here, we harness the quantum-confined Stark-effect to encode ultrafast electric near-fields into colloidal quantum dot luminescence. Our approach, termed Quantum-probe Field Microscopy (QFIM), combines far-field imaging of visible photons with phase-resolved sampling of electric waveforms. By capturing ultrafast movies, we spatio-temporally resolve a Terahertz resonance inside a bowtie antenna and unveil the propagation of a Terahertz waveguide excitation deeply in the sub-wavelength regime. The demonstrated QFIM approach is compatible with strong-field excitation and sub-micrometer resolution introducing a direct route towards ultrafast field imaging of complex nanodevices in-operando.

Fig: Quantum-Probe Field Microscopy (QFIM): a.) Imaging of THz electric near-fields in a fluorescence microscope using quantum dot (QD) luminescence. The absorption of ultrashort visible sampling pulses (green) is modulated via the quantum-confined Stark effect in a layer of nanocrystals (red); b.) The THz-induced change in the QD band structure can increase the absorption and translates to enhanced luminescence emission, accessible by optical microscopy. The modulated fluorescence yield SQFIM = STHz−S0 encodes the instantaneous local electric field and snapshot images resolve the spatio-temporally evolution of the near-field waveform

Acknowledgements: We [the authors] thank J. Koehler and M. Lippitz for experimental equipment and valuable discussions. This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) via project 403711541. T.L. acknowledges funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research program (grant agreement no. 714968). N.K. and P.M. thank the ARC for support through grant CE170100026. Open Access funding enabled and organized by Projekt DEAL.