Sep 3, 2020

[eBook] download figures: POWER/HVMOS Devices Compact Modeling

27/08/2020

Today we are pleased to share your Annual Book Performance Report with you, which summarizes the number of chapter downloads* in the first half of this year, the calendar year 2019 and previous years as applicable.
POWER/HVMOS Devices Compact Modeling
YearUsage
01/2020 - 06/2020285
2019599
2018656
2017766
2016843
2015912
20141333
2013658
2012420
2011401
2010463

*Since its online publication on Jun 10, 2010, there have been a total of 7336 chapter downloads for your eBook on SpringerLink. The table above shows the download figures for the last year(s).
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Broadband Measurements to 220 GHz

VectorStar ME7838G 70 kHz to 220 GHz Single Sweep VNA Measurements and On-Wafer Calibrations

  • Miniature mmWave MA25400A NLTL module connects directly to probes without cables for best dynamic range and stability
  • MPI TITAN Probes available in 50, 75, and 100 um pitch
  • Probes are field replaceable
On-wafer calibrations:
  • SOLT up 40 or 70 GHz if standards provide required performance
  • LRM, ALRM, LRRM, and multiline TRL up to 220 GHz
  • SOLR when thru is not 0 length, is not well matched, insertion loss is less known, and there is no .s2p file describing the thru
Calibration substrates:
  • Available from MPI
  • When possible, use a ceramic chuck to minimize the potential for multimode parasitic propagation.
  • Alternatively, use an isolation wafer on metal chuck if available

[paper] Wearable Energy Harvester

A Piezoelectric-Transducer-Biased 3-D Photosensitive Thin-Film Transistor
as a Dual-Mode Wearable Energy Harvester
Emad Iranmanesh1, Weiwei Li2,3, Ahmed Rasheed2,3, and Kai Wang2,3 (Member IEEE)
IEEE EDL, Vol. 41, No. 9, Sept. 2020
DOI: 10.1109/LED.2020.3009685

1School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China.
2Guangdong Provincial Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, China
3State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China

Abstract: This letter reports on a dual-mode wearable energy harvester that utilizes both piezoelectric and photoelectric effects. It integrates a piezoelectric transducer with a 3-D photosensitive dual-gate thin-film transistor (DGTFT) as a rectifier and a buffer. The energy conversion efficiency is enhanced by reducing the internal resistance of the 3-D photosensitive DGTFT upon light illumination. Such a dual-mode energy harvester is promising for wearable electronics.
Fig.: a) Schematic diagram of the proposed wearable dual-mode energy harvester formed by a polyvinylidene difluoride (PVDF) transducer integrated with a self-driven diode-connected 3-D photosensitive DGTFT as a buffer and a rectifier;  b) Equivalent circuit of the proposed dual-mode harvester.

Acknowlwgement: This work was supported by the Guangdong Innovative Research and Entrepreneurial Team Program under Grant 2014ZT05D340