#paper: R. Kotecha, G. Moreno, B. Mather and S. Narumanchi, "Modeling Needs for Power Semiconductor Devices and Power Electronics Systems," 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2019, pp. 12.1.1-12.1.4. https://t.co/x6825AQzZ4 https://t.co/Cmrty3XJHJ

#paper: R. Kotecha, G. Moreno, B. Mather and S. Narumanchi, "Modeling Needs for Power Semiconductor Devices and Power Electronics Systems," 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2019, pp. 12.1.1-12.1.4. https://t.co/x6825AQzZ4 pic.twitter.com/Cmrty3XJHJ

— Wladek Grabinski (@wladek60) February 21, 2020

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February 21, 2020 at 02:41PM
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#paper: N. Chowdhury et al., "First Demonstration of a Self-Aligned #GaN p-FET," 2019 IEEE #IEDM, San Francisco, CA, USA, 2019, pp. 4.6.1-4.6.4. https://t.co/7u64T4nDe2 https://t.co/gOSilpZbW9

#paper: N. Chowdhury et al., "First Demonstration of a Self-Aligned #GaN p-FET," 2019 IEEE #IEDM, San Francisco, CA, USA, 2019, pp. 4.6.1-4.6.4. https://t.co/7u64T4nDe2 pic.twitter.com/gOSilpZbW9

— Wladek Grabinski (@wladek60) February 21, 2020

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February 21, 2020 at 02:40PM
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#paper: Z. Wu et al., "A physics-aware compact modeling framework for transistor aging in the entire bias space," 2019 IEEE IEDM, San Francisco, CA, USA, 2019, pp. 21.2.1-21.2.4. https://t.co/sF6okiUdAk https://t.co/bxo7NNAiiV

#paper: 

Z. Wu et al., "A physics-aware compact modeling framework for transistor aging in the entire bias space," 2019 IEEE IEDM, San Francisco, CA, USA, 2019, pp. 21.2.1-21.2.4. https://t.co/sF6okiUdAk

sEKV References:
[8] C Enz et al., SSCM, vol. 9, no. 3, 2017.
[9] A Mangla et al., MIXDES, 2011.

pic.twitter.com/bxo7NNAiiV

— Wladek Grabinski (@wladek60) February 21, 2020

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February 21, 2020 at 11:47AM
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Moving To #GAA #FETs https://t.co/17yYwyMDHI #paper https://t.co/eqPWdfdvEv

Moving To #GAA #FETs https://t.co/17yYwyMDHI #paper pic.twitter.com/eqPWdfdvEv

— Wladek Grabinski (@wladek60) February 21, 2020

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February 21, 2020 at 07:42AM
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Open-Gate Silicon JFET: Silicon Junction Field Effect Transistors are fabricated at 3IT.Nano | CMC Microsystems https://t.co/9Ip4MTCiGM #paper https://t.co/9qTuAU1TQl

Open-Gate Silicon JFET: Silicon Junction Field Effect Transistors are fabricated at 3IT.Nano | CMC Microsystems https://t.co/9Ip4MTCiGM#paper pic.twitter.com/9qTuAU1TQl

— Wladek Grabinski (@wladek60) February 20, 2020

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February 20, 2020 at 05:16PM
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