Gallium Nitride FET Model
V V Orlov, G I Zebrev
National Research Nuclear University MEPHI, Moscow, Russia
E-mail: gizebrev@mephi.ru
Abstract: We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects. (read more
https://arxiv.org/ftp/arxiv/papers/1909/1909.05702.pdf)
Introduction: Gallium nitride (GaN) high electron mobility transistor (HEMT) technology has many advantages, that make it a promising candidate for high-speed power electronics. It allows high-power operation at much higher frequencies than silicon laterally diffused metal-oxide-semiconductor field-effect transistors (LDMOSFETs), currently a staple for the cellular base station industry [1]. The high breakdown voltage capability (over 100 V), high electron mobility, and high-temperature performance of GaN HEMTs are the main factors for its use in power electronics applications. Circuits design in both application regimes requires the accurate compact device models that can describe the non-linear I-V characteristics. The current state-of-the-art GaN power transistor circuit models are mostly empirical in nature and contain a large number of fitting parameters. The source-drain series resistance and self-heating make the compact modeling difficult [2]. Currently available models are not enough accurate to describe the I-V characteristics of power GaN HEMTs in all operation modes. This means, that we need a compact physics-based analytical model based on the physical description of the device. In this paper, we present a physics-based GaN power transistor model based on generic approach The paper contains 3 parts. In the first part, we will give a concise description of the model. The specific power HEMT’s effects, such as series resistance and self-heating will be discussed in the second and third parts
