ARM Fellow Surveys Moore's Law at 3nm IC https://t.co/JUPsAtrkFb #papers

ARM Fellow Surveys Moore's Law at 3nm IC https://t.co/JUPsAtrkFb #papers

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October 27, 2016 at 10:43AM
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[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V https://t.co/XQsatKslTX

[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V https://t.co/XQsatKslTX

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[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V

[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V

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Transistor Sizing for Bias-Stress Instability Compensation in Inkjet-Printed Organic C-Inverters https://t.co/91uJURy3KA #papers

Transistor Sizing for Bias-Stress Instability Compensation in Inkjet-Printed Organic C-Inverters https://t.co/91uJURy3KA #papers

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[ESSDERC Paper] Compact model for variability of low frequency noise due to number fluctuation effect

Compact model for variability of low frequency noise due to number fluctuation effect

N. Mavredakis and M. Bucher

2016 46th European Solid-State Device Research Conference (ESSDERC)

Lausanne, Switzerland, 2016, pp. 464-467

doi:10.1109/ESSDERC.2016.7599686

Abstract: Variability of low frequency noise (LFN) in MOSFETs is both geometry- and bias-dependent. RTS noise prevails in smaller devices where noise deviation is mostly area-dominated. As device dimensions increase, operating conditions determine noise variability maximizing it in weak inversion and increasing it with drain voltage. This dependence is shown to be directly related with fundamental carrier number fluctuation effect. A new bias- and area-dependent, physics-based, compact model for 1/f noise variability is proposed. The model exploits the log-normal behavior of LFN. The model is shown to give consistent results for average noise, variance, and standard deviation, covering bias-dependence and scaling over a large range of geometry.

Keywords: compact models, Low-frequency noise, MOSFET, Reactive power, Semiconductor device modeling, Shape, Standards, MOSFET, low frequency noise, noise variability

URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7599686&isnumber=7598672