1 Department of Microelectronics, Faculty of Electronic Engineering, University of Niš, Serbia
2 Center of Microelectronic Technologies, Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Serbia
3 Faculty of Arts and Sciences, Bolu Abant Izzet Baysal University, Turkey
4 Department of Physics, Faculty of Arts and Sciences, Bursa Uludag University, Turkey
Abstract: We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO2/SiO2 double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO2, are enhanced by incorporating high-k dielectric materials such as HfO2 to reduce oxide thickness in modern radiation sensors. The fabrication steps of the sensor are outlined, and model parameters, including the threshold voltage and transconductance, are extracted based on experimental data. Experimental setups for measuring electrical characteristics and irradiation are described, and a method for determining model parameters dependent on the accumulated dose is provided. A SPICE model card is proposed, including parameters for two dielectric thicknesses: (30/10) nm and (40/5) nm. The sensitivities of the sensors are 1.685mV/Gy and 0.78mV/Gy, respectively. The model is calibrated for doses up to 20Gy, and good agreement between experimental and simulation results validates the proposed model.
