Das, Biswapriyo, and Santanu Mahapatra
First Principles Based Compact Model for 2D-Channel MOSFETs
researchgate.net online publication
Abstract: We propose a generalized compact model for any two-dimensional material channel-based metal-oxide-semiconductor field-effect transistors. Unlike existing ones, the proposed model is first principles based and thus has ability to predict the circuit performance only using the crystallographic information of the channel material. It is ‘core’ in nature and developed following the industry-standard drift-diffusion formalism based ‘top-down’ hierarchy employing the FermiDirac statistics. We also implement the model in professional circuit simulator and good convergence is observed in 15-stage ring oscillator simulation.
Fig: Synopsis of the modeling framework. First, certain material specific parameters are extracted employing density functional theory computations and Hamiltonian calibration, which thereafter are used to develop the compact device model of the 2D-channel MOSFET using drift-diffusion formalism. The drain current and terminal charges obtained henceforth are used to implement digital circuits in commercial circuit simulator using its Verilog-AMS interface.
