[paper] Compact IV Model for DG MoS2 FETs

Ahmed Mounir, Francois Lime, Alexander Kloes, Alexandros Provias, Theresia Knobloch, 

K. P. O’Brien, Tibor Grasser and Benjamin Iniguez

Compact I–V Model for Double-Gated MoS2 FETs Including Short-Channel Effects

IEEE TED, Vol. 72, No. 12, Dec 2025

DOI: 10.1109/TED.2025.3622099

Rovira i Virgili University, Tarragona (SP)
THM University of Applied Sciences, Giessen (D)
Technical University of Vienna (A)
Intel Foundry Technology Research, Hillsboro (US)

Abstract: This article presents a physics-based analytical compact model for double-gated molybdenum disulfide (MoS2) field effect transistors (FETs), incorporating key physical and short-channel effects (SCEs), such as mobility degradation and velocity saturation. The model is developed from a unified charge control model by evaluating the charge density within the 2D MoS2 layer, represented using the Lambert W function, which provides an analytical expression valid and continuous from the subthreshold to the above threshold regime. The drain current is then derived from this unified charge control model, and as a function of closed-form equations for the charge densities at the source and drain ends of the channel. Despite its simplicity, the model shows excellent agreement with experimental data for channel lengths down to 60nm, making it a powerful tool for accurately predicting the performance of downscaled devices. By including SCEs, this work extends previous modeling efforts and provides a more comprehensive framework for the simulation and optimization of 2D material-based FETs in circuit design.

FIG: Cross-sectional view of the double-gated MoS2 FET, showing the top gate oxide stack made of Al2O3 and HfO2, with the local back gate oxide consisting of HfO2. Validation of the compact model against experimental data for double-gate MoS2 FET L = 60nm (bottom line)

Acknowledgements: This work was supported in part by European Union Bayesian inference with flexible electronics for biomedical applications (BAYFLEX) under Contract 101099555 and in part by the Ministry of Science of Spain under Contract PID2021122399OB-I00

[paper] Compact Analytical Modeling of FD Dual Material DG MOSFET

Shahana Akter1, Md. Mirazur Rahman1 and Md. Arif Abdulla Samy2

Compact Analytical Modeling of Surface Potential 

of a fully depleted Dual Material Double Gate MOSFET

Materials Mechatronics and Systems Engineering 2021, 1, 1. https://citescript.com/Journals/index.php/mmsj/

1 Department of EEE, Primeasia University
2 ATLAS Experiment, CERN

Abstract: Scaling transistors to gain speed while reducing capacitance and cost, is a key topic of today’s semiconductor industry, which is widely affected by Short-Channel Effects, the phenomenon that reduces efficiency. To dominate that unwanted effect, a 2-dimensional electrostatic potential modeling of the fully depleted channel, with high-k based dual material double gate (DMDG) MOSFET, has been developed in this paper. The expression for the electrostatic potential of DMDG has beendeveloped using 2-D Poisson’s equation with appropriate device boundary conditions. The device performance has been analyzed with the variation in device parameters, such as channel length, channel thickness, oxide thickness, and other key parameters. For authenticating, results have also been compared with state-of-the-art published results. This research was successful to exhibit that the proposed model could overcome Drain-induced Barrier Lowering, enhancing mobility carrier resulting to optimize short channel effect, which can bring a revolutionary change in transistor industry as well as in low power VLSI applications.

Fig: Device structure for the 2D double gate MOSFET

Acknowledgment: Authors would like to thank Professor Dr. Quazi Deen Mohd Khosru for his guidance in every step of this research. Without his valuable and persistent help, it would not be possible to conclude this project. The project has no external funding.