Zhang, Huaiyuan, Guofu Niu, Andries J. Scholten, and Marnix B. Willemsen
"Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs"
IEEE Transactions on Electron Devices (2025)
DOI: 10.1109/TED.2025.3558114
1. Auburn University, Auburn, AL, USA
2. NXP, Eindhoven, The Netherlands
Abstract: A new compact model and an extraction method for avalanche multiplication factor (M-1) at high currents are proposed. At a fixed collector–base (CB) voltage (VCB), M-1 first decreases with increasing emitter current (IE) and then increases at higher currents when the Kirk effect occurs. Different forced-IE M-1 extraction techniques are evaluated, including a new compact modeling-based M-1 extraction technique that accurately captures the Early effect, the Kirk effect, and self-heating. The model is implemented in a development version of MEXTRAM and demonstrated experimentally to model both the current and bias dependence of M-1 and base current (IB).
FIG: Simplified dc equivalent circuit of a transistor under forced IE,VCB
and fT(IE) meas/sim up to 150 mA at VCB = 1, 2, and 3 V (b)
Acknowledgment: The authors wish to acknowledge the support of the Compact Model Coalition (CMC).
