TSMC Technology Symposium: All the Processes, All the Fabs
by Paul McLellan at breakfast-bytes
27 Aug 2020
TSMC has new transistor structure (nanosheet) and new materials such as high mobility channel, 2D, carbon nanotube (CNT). TSMC has already demonstrated at 32Mb nanosheet SRAM fully-functional at 0.46V. It has also identified promising 2D materials such as MoS2 (molybdenum disulfide). At IEDM last year, they disclosed the first BEOL CNT power-gating device integrated with silicon-based CMOS.
Scaling continues with EUV advances with the current generation of scanners. They are also working with ASML (the only supplier of EUV equipment) on High-NA EUV [read more...]
