[paper] Cryo HiSIM Compact Model

Dondee Navarro, Chika Tanaka, Kyoto Institute, Shin Taniguchi, Kazutoshi Kobayashi, Michihiro Shintani and Takashi Sato

Physics-based Modeling to Extend MOSFET Compact Model for Cryogenic Operation

(Invited Paper) ASPDAC ’25, January 20–23, 2025, Tokyo, Japan

DOI: 10.1145/3658617.3703137

1 KIOXIA Corporation Yokohama (J)

2 Kyoto Institute of Technology Kyoto (J)

3 Kyoto University Kyoto (J)

Abstract: This paper extends the low-temperature modeling capabilities of an industry-standard compact metal-oxide-semiconductor field-effect transistor (MOSFET) model by incorporating physics-based representations of cryogenic effects in semiconductors. Specifically, the incomplete dopant ionization effect is integrated into the bulk Fermi potential calculation of the compact model and applied as a threshold voltage shift in the formulation of Poisson’s equation. Temperature-related models for bandgap energy, saturation velocity, and contact resistance at the source/drain regions are also enhanced. Using transistors fabricated with 22nm process technology, we demonstrate that this consistent modeling approach accurately reproduces current-voltage and threshold voltage-temperature characteristics across a temperature range from 300K to 4K.

FIG: Extracted Vth-T and SS-T characteristics from measurements

and extended HiSIM model simulations.

Acknowledgments: This work was also supported through the activities of d-lab VDEC, the University of Tokyo, in collaboration with NIHON SYNOPSYS G.K., Cadence Design Systems, and Siemens Electronic Design Automation Japan K.K.