[paper] IGBT Compact Modeling

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Y. Miyaoku¹, A. Tone¹, K. Matsuura¹, M. Miura-Mattausch¹ (Fellow, IEEE),

H. J. Mattausch¹ (Senior Member, IEEE), and D. Ikoma²

IEEE J-EDS, vol. 8, pp. 1373-1380, 2020

doi: 10.1109/JEDS.2020.3008919

1 Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527, Japan
2 Sensor and Semiconductor Development, Denso Corporation, Aichi 448-8661, Japan

ABSTRACT The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT’s gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gatebottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

FIG: IGBT structures with nMOSFET + pnp BJT part (a. and b.) and nMOSFET-only structure (c.). The X–Y line is through the middle of the bottom-gate oxide and the A–B line is directly underneath the bottom-gate oxide.

Received 14 May 2020; revised 2 July 2020; accepted 8 July 2020. Date of publication 13 July 2020; date of current version 8 December 2020. The review of this article was arranged by Editor M. Mierzwinski. Digital Object Identifier 10.1109/JEDS.2020.3008919