#paper: S. A. Albahrani et al., "Extreme Temperature Modeling of AlGaN/GaN HEMTs," in IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 430-437, Feb. 2020. doi: 10.1109/TED.2019.2960573 https://t.co/S6BSXBDxqn https://t.co/r2eBzzWvZS

#paper: S. A. Albahrani et al., "Extreme Temperature Modeling of AlGaN/GaN HEMTs," in IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 430-437, Feb. 2020.
doi: 10.1109/TED.2019.2960573https://t.co/S6BSXBDxqn pic.twitter.com/r2eBzzWvZS

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