#paper: K. Li and S. Rakheja, “Modeling and Simulation of Quasi-Ballistic III-Nitride Transistors for RF and Digital Applications,” Int. J. Hi. Spe. Ele. Syst., vol. 28, no. 01n02, p. 1940011, Mar. 2019 doi: 10.1142/S0129156419400111 https://t.co/k3Rf5UGe8w https://t.co/SrmUC66YDz

#paper: K. Li and S. Rakheja, “Modeling and Simulation of Quasi-Ballistic III-Nitride Transistors for RF and Digital Applications,” Int. J. Hi. Spe. Ele. Syst., vol. 28, no. 01n02, p. 1940011, Mar. 2019
doi: 10.1142/S0129156419400111https://t.co/k3Rf5UGe8w pic.twitter.com/SrmUC66YDz

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