#paper K. Kato, H. Matsui, H. Tabata, M. Takenaka and S. Takagi, "Fabrication and Electrical Characteristics of ZnSnO/Si Bilayer Tunneling Filed-Effect Transistors" IEEE JEDS, vol. 7, pp. 1201-1208, 2019
— Wladek Grabinski (@wladek60) December 26, 2019
doi: 10.1109/JEDS.2019.2933848https://t.co/TrScHGouQR pic.twitter.com/qizSOxCKSu
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December 26, 2019 at 10:22AM
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