A Compact Model for Border Traps in Lateral MOS Devices with Large Channel Resistance https://t.co/p9sOA4A8Ee #paper — Wladek Grabinski (@wladek60) April 26, 2019
A Compact Model for Border Traps in Lateral MOS Devices with Large Channel Resistance https://t.co/p9sOA4A8Ee #paper
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