Low Frequency Drain #Noise Characterization and #TCAD Physical Simulations of #GaN #HEMTs: Identification and analysis of physical location of traps https://t.co/yXvJjLeMe7 #paper
— Wladek Grabinski (@wladek60) December 29, 2017
from Twitter https://twitter.com/wladek60
December 29, 2017 at 08:29PM
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