IEDM'09

The 2009 IEEE International Electron Devices Meeting (IEDM) will be held in the Hilton Baltimore Hotel in Baltimore (MD) from December 6 to 9 2009. This time IEDM will not be held in Washington after the San Francisco edition!

IEDM is the top conference in the field of electron devices. It is of course the most competitive one. Only truly outstanding papers are accepted. It is highly recommended that experimental results are shown, also some good simulation papers can be also accepted.

Two short courses will be held on Sunday, December 6, on on low power/low energy circuits and scaling challenges.

This year there will also be three plenary presentations. Furthermore, there will be a An Emerging Technology session on "Graphene Nanoelectronics".

Deadline for abstract submissions is June 26 2009 at 5.00 pm Pacific Standard Time.

Topics include all aspects related to electron devices, grouped in several areas:

-CMOS DEVICES & TECHNOLOGY (CDT)
-CHARACTERIZATION, RELIABILITY and YIELD (CRY)
-DISPLAYS, SENSORS, AND MEMS (DSM)
-MEMORY TECHNOLOGY (MT)
-MODELING AND SIMULATION (MS)
-PROCESS TECHNOLOGY (PT)
-QUANTUM, POWER, AND COMPOUND SEMICONDUCTOR DEVICES (QPC)
-SOLID STATE AND NANOELECTRONIC DEVICES (SSN)

This year the area of Modeling and Simulation (MS) explicitly includes "physical and compact models for devices and interconnects", and also "parameter extraction", and "early compact models for advanced technologies." It seems that compact modeling is considered a more important topic in IEDM than ever before!

If you have important results to show, I vively recommend to send an abstract to IEDM. It is the best place to present them, and to discuss them with the top people. Even if your abstract is rejected, or if you do not have any new results to show, I encourage researchers to attend IEDM, including compact modeling researchers.