Aug 6, 2021

Please, no #Moore: '#Law' that defined how chips have been made for decades has run itself into a cul-de-sac



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August 06, 2021 at 11:29AM
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Aug 5, 2021

[paper] Modeling and investigation of SET Inverter Circuit

C. Shyamala, V. Kalpana
Modeling and investigation of SET Inverter Circuit
International Journal of Innovative Research in Engineering 25 
Vol. 2, Issue 3 (May-June 2021), pp: 25-28 
ISSN No: 2582-8746; www.theijire.com

* Department of EEE, RV College of Engineering, VTU University, Karnataka. India.

Abstract: This paper presents an analytical model Inverter based on the theory of single electron transistor(SET). The proposed design is very flexible such that it can be used for single gate, multi-gate, symmetric, asymmetric devices and most importantly it can also consider the effect of background charge. It can also be used for large voltage range of drain-source voltage irrespective of the bias conditions. The proposed design has been simulated with SPICE and the characteristics produced by the proposed design have been verified against Monte Carlo simulator SIMON [1].
Fig: Schematic diagram of single electron inverter

Reference:
[1] SIMON - A single electron device and circuit simulator
https://www.lybrary.com/simon/examples.html




What is #TinyML, and why does it matter?



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August 05, 2021 at 10:07AM
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Russian Forum "Microelectronics 2021

Russian Forum "Microelectronics 2021"
September 7-9, Moscow, JSC "ENPO SPELS"

The Scientific Conference Pre-session (based on Section 5)
Moderators: Bobkov S.G. IPPM RAS Nikiforov A.Yu. CEPE NRNU MEPhI

Section 1: Navigational communication VLSI and modules
Moderators: I. L. Korneev JSC NIIMA Progress Steshenko VB JSC "RKS"

Section 2: High performance computing systems
Moderators: Khrenov G.Yu. JSC "Baikal Electronics" Bychkov I.N. JSC "MCST"

Section 3: Information control and radio engineering systems
Moderators: Pereverzev A.L. NRU MIET Yakunin A.N. NRU MIET P.M. Eremeev JSC "Research Institute" Submicron "

Section 4: Technologies and components of micro- and nanoelectronics
Moderators: Shelepin N.A. JSC "NIIME" Putrya M.G. NRU MIET Egorov A.Yu. LLC "Connector Optics"

Section 5: Micro- and optoelectronic products for general and special purposes
Moderators: Bobkov S.G. IPPM RAS Nikiforov A.Yu. CEPE NRNU MEPhI

Section 6: Design and simulation systems for electronic components and systems
Moderators: Rusakov S.G. Corresponding member of RAS Zavalin Yu.V. JSC "NIIMA" Progress "

Section 7: Microwave integrated circuits and modules
Moderators: Minnebaev V.M. JSC "NPP" Pulsar " P.V. Panasenko JSC "NIIME" Mukhin I.I. JSC "NIIMA" Progress "

Section 8: Microsystems. Sensors and Actuators
Moderators: Timoshenkov S.P. NRU MIET Dyuzhev N.A. STC NMST

Section 9: Special technological equipment
Moderators: Biryukov M.G. JSC NIITM Alekseev A.N. CJSC "NTO"

Section 10: Neuromorphic computing. Artificial intelligence
Moderators: Kryzhanovsky B.V. FGU FSC NIISI RAS Tel'minov O.A. JSC "NIIME" Gornev E.S. JSC "NIIME"

Section 11: Quantum Technologies - Quantum Sensors
Moderators: Gorbatsevich A.A. FIAN, NRU MIET Bogdanov Yu.I. FTIAN, NRU MIET S.P. Kulik Moscow State University named after M.V. Lomonosov

Aug 3, 2021

IJHSES Special Issue Volume 29, Issue 01n04, 2020

IJHSES Special Issue on Nanotechnology for Electronics, Biosensors, 
Additive Manufacturing and Emerging Systems Applications 
Guest Editors: F. Jain, C. Broadbridge, M. Gherasimova and H. Tang
Volume 29, Issue 01n04 (March, June, September, December 2020) 

This Special issue on Nanotechnology for Electronics, Biosensors, Additive Manufacturing and Emerging Systems Applications comprises peer reviewed articles selected from the 29th annual symposium of the Connecticut Microelectronics and Optoelectronics Consortium (CMOC), virtually held on October 2, 2020 and hosted by Information Technology Staff, University of Connecticut (Storrs Campus).

Organized by a team of seven academic institutions and about eighteen companies across the United States, this symposium sign-posted the progress and development of state-of-arts research in high-speed electronics over the last 30 years.




Articles include keynote presentations by three experts in their field:
  • Dr. H. Lee, Electronic and IR Sensing in Forensics, U. New Haven, and Henry Lee Center for Forensic Research
  • Dr. E. Fossum, Quanta Image Sensor, Dartmouth College
  • Dr. J. Chow, Quantum Computing, IBM Thomas J. Watson, Research Center
The papers presented span from novel materials and devices, biosensors and bio- nano- systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields, Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also included in this special issue on high performance materials for implementing high-speed electronic systems.

In the area of material synthesis, modeling of dislocations behavior in various II-VI and III-V heterostructures and their gettering at sidewall bringing novel approaches are also featured

Coming hot on the heels, are recent developments on high performance devices include equivalent circuits models at room and 4.2K; quantum dot nonvolatile memories, 3D- confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications.

In summary, the papers selected for this special issue cover various aspects of h performance materials and emerging devices for implementing high-speed electronic systems. We would like to take this opportunity to express our thanks to the authors, participants, and reviewers for their contributions and active participation, networking, and knowledge sharing on a variety of research areas.