Recently the
2nd Latin America MOS-AK Workshop at LAEDC was reported in
IEEE EDS Newsletter, July 2020 Vol. 27, No. 3 ISSN: 1074 1879 by Lluis Marsal and Benjamin Iñiguez:
The 2nd Latin American edition of the
MOS-AK Workshop on Compact Modeling was held at LAEDC in San Jose, Costa Rica, was held in conjunction with the Latin American Symposium on Circuits and Systems (LASCAS 2020).. It was chaired by Prof. Benjamin Iñiguez (Universitat Rovira I Virgili, Tarragona, Spain). It included five talks. Prof. Antonio Cerdeira (CINVESTAV, Mexico) presented an "Analytical Current Voltage Model for Double Gate a-IGZO TFTs with Symmetric Structure." Prof. Alexander Kloes (THM, Giessen, Germany) addressed "Approaches for Analytical (Compact) Modeling of Tunneling Currents in MOS Transistors." Prof. Jean-Michel Sallese (EPFL, Switzerland) gave a talk about "Modeling the Junctionless Ion Sensitive Field Effect Transistor" Prof. Gilson Wirth (UFRGS, Porto Alegre, Brazil) targeted "The area scaling of charge trap induced time-dependent variability." Finally, Prof. Benjamin Iñiguez (URV, Tarragona, Spain) talked about "Characterization and modeling of 1/f noise in organic and IGZO TFTs". Over 70 academics, professionals and students attended these events and enjoyed the discussions with the speakers.
Visit also <http://www.mos-ak.org/costa_rica_2020/>
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