#paper: Boran Wang, Ao Zhang, Yixin Zhang, Jianjun Gao; An approach for determining thermal resistance model parameters of SiGe HBT; IJNM, First published:20 May 2019 https://t.co/HpoAjc5Lhl https://t.co/KVfAx5nVGm

#paper: Boran Wang, Ao Zhang, Yixin Zhang, Jianjun Gao; An approach for determining thermal resistance model parameters of SiGe HBT; IJNM, First published:20 May 2019https://t.co/HpoAjc5Lhl pic.twitter.com/KVfAx5nVGm

— Wladek Grabinski (@wladek60) February 7, 2020

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February 07, 2020 at 08:14PM
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#paper: S. Hou, M. Shakir, P. Hellström, B. G. Malm, C. Zetterling and M. Östling, "A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C," in IEEE EDS Journal, vol. 8, pp. 116-121, 2020. doi: 10.1109/JEDS.2020.2966680 https://t.co/iGWEwYIxEb https://t.co/RAjaJj5zXJ

#paper: S. Hou, M. Shakir, P. Hellström, B. G. Malm, C. Zetterling and M. Östling, "A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C," in IEEE EDS Journal, vol. 8, pp. 116-121, 2020.
doi: 10.1109/JEDS.2020.2966680 https://t.co/iGWEwYIxEb pic.twitter.com/RAjaJj5zXJ

— Wladek Grabinski (@wladek60) February 7, 2020

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#paper: Zhongjie Ren and Yuan Taur; Non-GCA Modeling of Near Threshold I-V Characteristics of DG MOSFETs Available online 1 February 2020 In Press, SSE Journal Pre-proof https://t.co/jnt2d48q5J https://t.co/9hJayW79si

#paper: Zhongjie Ren and Yuan Taur; Non-GCA Modeling of Near Threshold I-V Characteristics of DG MOSFETs
Available online 1 February 2020
In Press, SSE Journal Pre-proof https://t.co/jnt2d48q5J pic.twitter.com/9hJayW79si

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Heterogeneous Integration Roadmap #HIR: 3rd Annual Meeting – SCV Chapter, IEEE CPMT Society https://t.co/Hvqrz3J1o5 #paper https://t.co/Jbi32n8iOW

Heterogeneous Integration Roadmap #HIR: 3rd Annual Meeting – SCV Chapter, IEEE CPMT Society https://t.co/Hvqrz3J1o5 #paper pic.twitter.com/Jbi32n8iOW

— Wladek Grabinski (@wladek60) February 6, 2020

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February 06, 2020 at 01:16PM
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#paper: S. A. Albahrani et al., "Extreme Temperature Modeling of AlGaN/GaN HEMTs," in IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 430-437, Feb. 2020. doi: 10.1109/TED.2019.2960573 https://t.co/S6BSXBDxqn https://t.co/r2eBzzWvZS

#paper: S. A. Albahrani et al., "Extreme Temperature Modeling of AlGaN/GaN HEMTs," in IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 430-437, Feb. 2020.
doi: 10.1109/TED.2019.2960573https://t.co/S6BSXBDxqn pic.twitter.com/r2eBzzWvZS

— Wladek Grabinski (@wladek60) February 6, 2020

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