#Modeling of Quantum Confinement and Capacitance in III–V Gate-All-Around 1-D Transistors https://t.co/Ql0DQWQ5hf

#Modeling of Quantum Confinement and Capacitance in III–V Gate-All-Around 1-D Transistors https://t.co/Ql0DQWQ5hf

— Wladek Grabinski (@wladek60) November 25, 2017

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November 25, 2017 at 06:09PM
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Comparative Analysis of Semiconductor Device Architectures for 5-nm Node and Beyond https://t.co/sGwqx6xw7E #paper

Comparative Analysis of Semiconductor Device Architectures for 5-nm Node and Beyond https://t.co/sGwqx6xw7E #paper

— Wladek Grabinski (@wladek60) November 25, 2017

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November 25, 2017 at 04:31PM
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TCAD Mobility #Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections https://t.co/xAcLMzh4S9

TCAD Mobility #Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections https://t.co/xAcLMzh4S9

— Wladek Grabinski (@wladek60) November 25, 2017

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November 25, 2017 at 06:04PM
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A Compact Quasi-Static Terminal Charge and Drain Current #Model for Double-Gate Junctionless Transistors and Its... https://t.co/zg9x86qUaH

A Compact Quasi-Static Terminal Charge and Drain Current #Model for Double-Gate Junctionless Transistors and Its... https://t.co/zg9x86qUaH

— Wladek Grabinski (@wladek60) November 24, 2017

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November 24, 2017 at 09:39PM
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A Compact Quasi-Static Terminal Charge and Drain Current #Model for Double-Gate Junctionless Transistors and Its Circuit Validation - IEEE Journals & Magazine https://t.co/NgDkKN8gxr

A Compact Quasi-Static Terminal Charge and Drain Current #Model for Double-Gate Junctionless Transistors and Its Circuit Validation - IEEE Journals & Magazine https://t.co/NgDkKN8gxr

— Wladek Grabinski (@wladek60) November 24, 2017

from Twitter https://twitter.com/wladek60

November 24, 2017 at 09:39PM
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