[paper] ReRAM: History, Status, and Future

ReRAM: History, Status, and Future

Y. Chen, Member, IEEE

Western Digital Corporation, Milpitas, CA

in IEEE TED, vol. 67, no. 4, pp. 1420-1433, April 2020

doi: 10.1109/TED.2019.2961505.

Abstract: This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s. This review goes through various oxygen/oxygen vacancy and metal-ion-based ReRAM devices and their operation mechanisms. This review also benchmarks the performance of various oxygen/oxygen vacancy and metal-ion-based ReRAM devices with general trend drawn. Being a semiconductor memory and storage technology, the commercialization attempts for both stand-alone mass storage/storage-class memory and embedded nonvolatile memory are also reviewed. Looking toward the coming era, the potential of using ReRAM technology to improve machine learning efficiency is discussed. 

Fig: General category of resistive switching memory technologies

with ReRAM highlighted as the review focus

Acknowledgment: Sincere acknowledgment to people who ever contribute to ReRAM technology development and understanding.

URL: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8961211&isnumber=9046113

[paper] Review of physics-based compact models for emerging nonvolatile memories

Nuo Xu¹, Pai-Yu Chen², Jing Wang¹, Woosung Choi¹, Keun-Ho Lee³, Eun Seung Jung³, Shimeng Yu²

Review of physics-based compact models for emerging nonvolatile memories

¹Device Lab, Samsung Semiconductor Inc., San Jose, CA 95134, USA

²School of ECEE, Arizona State University, Tempe, AZ 85281, USA

³Semiconductor R&D Center, Samsung Electronics, Hwasung-si, Gyeonggi-do, Korea

Journal of Computational Electronics, 2017, pp. 1-13

https://doi.org/10.1007/s10825-017-1098-0

Abstract: A generic compact modeling methodology for emerging nonvolatile memories is proposed by coupling comprehensive physical equations from multiple domains (e.g., electrical, thermal, magnetic, phase transitions). This concept has been applied to three most promising emerging memory candidates: PCM, STT-MRAM, and RRAM to study their device physics as well as to evaluate their circuit-level performance. The models’ good predictability to experiments and their effectiveness in large-scale circuit simulation suggest their unique role in emerging memory research and development [read more...]

https://doi.org/10.1007/s10825-017-1098-0